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System for specifying defect cause in vapor deposition mask, method for specifying defect cause in vapor deposition mask, and program

An evaporation mask and cause technology, which is applied in the field of evaporation mask defect cause determination systems, and can solve problems such as the inability to determine the cause of defects.

Pending Publication Date: 2021-10-12
TOPPAN PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even with the metal mask inspection device described in Patent Document 2, the cause of the defect (that is, the cause of the occurrence of such foreign matter, etc.) cannot be identified.

Method used

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  • System for specifying defect cause in vapor deposition mask, method for specifying defect cause in vapor deposition mask, and program
  • System for specifying defect cause in vapor deposition mask, method for specifying defect cause in vapor deposition mask, and program
  • System for specifying defect cause in vapor deposition mask, method for specifying defect cause in vapor deposition mask, and program

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ＞

[0055] figure 1 It is a figure which shows an example of the schematic structure of the vapor deposition mask defect cause specification system 1 of 1st Embodiment.

[0056] exist figure 1 In the example shown, the vapor deposition mask defect cause identification system 1 pairs the vapor deposition mask M (refer to figure 2 ) to determine the cause of the defect. The vapor deposition mask defect cause identification system 1 includes an image acquisition unit 11, a first area calculation unit 12, a second area calculation unit 13, an area ratio calculation unit 14, a radial dimension calculation unit 15, a symmetry determination unit 16, and a defect cause Determination section 17.

[0057] Here, a method of manufacturing the vapor deposition mask M imaged by the vapor deposition mask defect cause identification system 1 will be described based on the drawings.

[0058] Such as Figure 14A As shown, the resist R is disposed on both surfaces of the substrate M1. As the ...

no. 2 Embodiment approach ＞

[0197] Hereinafter, a second embodiment of the vapor deposition mask defect cause identifying system, the vapor deposition mask defect cause identifying method, and the program of the present invention will be described.

[0198] The vapor deposition mask defect cause specifying system 1 of the second embodiment has the same configuration as the vapor deposition mask defect cause specifying system 1 of the above-mentioned first embodiment except for the points described later. Therefore, according to the vapor deposition mask defect cause specifying system 1 of the second embodiment, the same effects as those of the vapor deposition mask defect cause specifying system 1 of the above-mentioned first embodiment can be achieved except for the points described later.

[0199] Figure 13It is a figure which shows an example of the schematic structure of the vapor deposition mask defect cause identification system 1 of 2nd Embodiment.

[0200] exist Figure 13 In the example shown...

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Abstract

This system for specifying a defect cause in a vapor deposition mask, the mask having a substrate in which a plurality of holes are formed, comprises: an image acquisition unit for acquiring a captured image of the vapor deposition mask which includes a plurality of hole portions in which the plurality of holes are imaged, the hole portions including normal hole portions and defective hole portions, and a substrate portion in which the substrate surrounding the plurality of holes is imaged; a first area calculation unit for calculating the area of the normal hole portions included in the captured image acquired by the image acquisition unit; a second area calculation unit for calculating the area of the defective hole portions included in the captured image acquired by the image acquisition unit; an area ratio calculation unit for calculating an area ratio which is the proportion of the area of the defective hole portions to the area of the normal hole portions; and a defect cause specifying unit for specifying a cause of the defective hole portions. The defect cause specifying unit specifies that the cause of the defective hole portions is a first cause or a second cause when the area ratio is 1 or greater, and specifying that the cause of the defective hole portions is neither the first cause nor the second cause when the area ratio is less than 1.

Description

technical field [0001] The invention relates to a system for determining the cause of an evaporation mask defect, a method and a program for determining the cause of an evaporation mask defect. [0002] This application claims priority based on Japanese Patent Application No. 2019-086570 filed in Japan on April 26, 2019, and uses the content thereof here. Background technique [0003] Conventionally, there is known a wafer defect inspection device that detects a defect of a wafer from an image of the wafer (see Patent Document 1). In the wafer defect inspection device described in Patent Document 1, a moving average luminance is calculated for each pixel in an inspection target area of ​​a wafer in an image, and it is determined whether each pixel is a defect candidate pixel. [0004] However, in the technology described in Patent Document 1, the type of defect is determined based on the area, roundness, ratio of the long width to the short width, etc., but the wafer defect...

Claims

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Application Information

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IPC IPC(8): C23C14/04G01N21/956
CPCC23C14/04G01N21/956G01N21/8851G01B11/28G01B11/08C23C14/042G01N2021/8854G01N2021/95676
Inventor 山田清治柴田泰充藤户大生
Owner TOPPAN PRINTING CO LTD