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Circuit configured to detect fault and method of detecting fault

A technique for detecting faults, circuits, applied in the direction of circuits, measuring electricity, circuit devices, etc., can solve the problems of time delay power loss, difficulty in determining the appropriate gate resistor, etc.

Inactive Publication Date: 2021-10-15
SEMICON COMPONENTS IND LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these fault detection and response functions may require the use of additional signal inputs and additional components
Additionally, the circuitry used to detect faults can introduce time delays and additional power loss, and can make it difficult to determine the proper gate resistor to use with a particular IGBT or MOSFET

Method used

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  • Circuit configured to detect fault and method of detecting fault
  • Circuit configured to detect fault and method of detecting fault
  • Circuit configured to detect fault and method of detecting fault

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0035] Embodiments involve the use of IGBTs or power MOSFETs to detect fault conditions in circuits.

[0036] In the following detailed description, certain exemplary embodiments are illustrated and described. As those skilled in the art would realize, these embodiments may be modified in various different ways, all without departing from the scope of the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature and not restrictive. Like reference numerals denote like elements throughout the specification.

[0037] In the following, some components are disclosed as Bipolar Junction Transistors (BJTs), but embodiments are not limited thereto. Thus, the BJT in the example could be replaced with some other suitable type of transistor (such as a FET) with a control input (such as a gate), a first conduction terminal (such as a source or drain), and a second conduction terminal (such as The other of source or drain) corresponds to...

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PUM

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Abstract

The invention relates to a circuit configured to detect a fault and a method of detecting a fault. A circuit for detecting a fault affecting a power transistor includes an adjustment circuit, a first fault state circuit, and a fault signaling circuit. The power transistor is turned on and off by assertion and de-assertion of an input signal, respectively. The adjustment circuit generates a regulated gate voltage signal from a gate voltage of the power transistor. The first fault state circuit asserts a first fault indication when the adjusted gate voltage signal is greater than a first fault reference voltage during a first interval after assertion of the input signal. The fault signaling circuit asserts a fault signal in response to the first fault indication being asserted and cancels the fault signal in response to the input signal being cancelled.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Application No. 16 / 826881, filed March 23, 2020, which is hereby incorporated by reference for all purposes. technical field [0003] The present invention relates to circuits and methods for protecting insulated gate bipolar transistors (IGBTs) or power metal oxide semiconductor field effect transistors (MOSFETs) from faults such as short circuit faults, hard switching faults and / or underload faults. Background technique [0004] Devices for power control and / or power conversion (hereinafter referred to as power control devices) may use power transistors. Power control or switching may be achieved by turning such power transistors on or off at predetermined intervals, such as by using pulse width modulation (PWM), pulse frequency modulation (PFM), or the like. Power transistors should be chosen to reliably handle circuit current not only under normal conditions but also under ov...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R31/52
CPCG01R31/2608G01R31/2621G01R31/2617G01R31/52H03K17/08122H03K17/18H02H1/0007H02H3/08H02H9/02
Inventor 权泰成
Owner SEMICON COMPONENTS IND LLC