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Method for detecting plane deformation of silicon wafer

A technology of plane deformation and detection method, which is applied in the photoengraving process of the pattern surface, semiconductor/solid-state device testing/measurement, optics, etc., can solve the problems of difficulty in guaranteeing the effect of pre- and post-process overlay, and achieve the effect of monitoring deformation.

Pending Publication Date: 2021-10-15
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the displacement and deformation of the silicon wafer in the X and Y directions cannot be monitored in advance, it is difficult to guarantee the overlay effect of the front and rear processes

Method used

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  • Method for detecting plane deformation of silicon wafer

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Embodiment Construction

[0029] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0030] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...

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Abstract

The invention discloses a method for detecting plane deformation of a silicon wafer, and relates to the field of semiconductor manufacturing. The silicon wafer plane deformation detection method comprises the following steps: obtaining a silicon wafer, wherein an alignment mark is formed on the silicon wafer; putting the silicon wafer into an exposure machine table; measuring the displacement of the alignment mark on the silicon wafer by using the exposure machine; and detecting whether the silicon wafer deforms in a plane or not according to the measured displacement of the alignment mark on the silicon wafer. The problem that the deformation condition of a silicon wafer in a plane cannot be detected at present is solved. The effect of effectively monitoring the deformation condition of the silicon wafer in the plane is achieved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a method for detecting plane deformation of a silicon wafer. Background technique [0002] In the production and manufacturing process of semiconductor devices, silicon wafers are subjected to processes such as etching, oxidation, deposition, and photolithography. During these processes, silicon wafers are subjected to high temperature process heat treatment. [0003] The high temperature process will cause warpage and deformation of the silicon wafer. At present, when detecting the deformation of a silicon wafer, conventional methods can only detect the warpage of the silicon wafer in the Z direction, but cannot detect the nanoscale displacement and deformation of the silicon wafer in the X and Y directions. [0004] As the size of the device continues to decrease, the overlay accuracy is also getting smaller and smaller, and the overlay of the front and re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G03F7/20
CPCG03F7/70633G03F7/70616H01L22/12H01L22/20
Inventor 姜冒泉金乐群费志平王德朋
Owner HUA HONG SEMICON WUXI LTD
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