Microwave low-reflection temperature control unit, superstructure and design method
A temperature-controlled, low-reflection technology, applied in electrical components, antennas, etc., can solve the problems of inability to achieve effective microwave absorption and high reflection, achieve simple structure, reduce thermal radiation differences, and solve compatibility effects
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Embodiment 1
[0068] In this embodiment, the superstructure is designed according to the reflection characteristics of incident waves at 11-19 GHz (preset frequency range). The parameters of the basic unit are: px= 5.5 mm, py=6.875 mm, gx=3.0 mm, gy=4.36 mm, and the parameters of the semiconductor grain are a=1.05 mm, h=3.0 mm. px:py=4:5, the ratio satisfies a simple integer ratio, then the "0" coding unit can be composed of 5×4 ( M× Z ) basic units, the "1" coding unit is obtained by rotating the "0" coding unit 90° along the z-axis, and the side length of the subunit 42 is p_c=27.5 mm. The arrangement of superstructure coding units is 010101... / 101010....
[0069] Figure 4 It is the simulation result of the polarization transformation of the basic unit in the first embodiment of the disclosure;
[0070] refer to Figure 4 , the conversion efficiency of the designed basic unit is above 90% in the frequency range of 12.2-18.0 GHz, which indicates that the designed Peltier temperature ...
Embodiment 2
[0078] The structure and size of the basic unit, 1" coding unit, and "0" coding unit in the second embodiment are the same as those in the first embodiment, the difference is that the arrangement of the superstructure coding units is 010101... / 010101..., that is, according to the periodic bar In this case, the coding units are still arranged in the grid-like structure.
[0079] Figure 8 This is the simulation result of the vertical reflectivity of the superstructure in which the "0" and "1" coding units are arranged in the manner of 010101... / 010101... in the second embodiment of the present invention.
[0080] The "0" and "1" coding units are arranged according to 010101... / 010101... to form a superstructure with a side length of 220 mm. The superstructure has a beam-splitting effect on incident electromagnetic waves, and can split vertically incident electromagnetic waves into two directions perpendicular to the periodic bar, that is, the azimuth angles are 0° and 180°. C...
Embodiment 3
[0082] In this embodiment, the superstructure is designed according to the reflection characteristics of the incident wave at 12-20 GHz (preset frequency range). The parameters of the basic unit are: px= 4.8 mm, py=6.4 mm, gx=2.8 mm, gy=4 mm, and the parameters of the semiconductor grain are a=1.05mm, h=3.0 mm. px:py=3:4, the ratio is a simple integer ratio, then the "0" coding unit can be composed of 4×3 ( M×Z ) basic units, the "1" coding unit is obtained by rotating the "0" coding unit 90° along the z-axis, and the side length of the coding unit is p_c=19.2mm.
[0083] Figure 9 It is the simulation result of the polarization transformation of the basic unit in the third embodiment of the disclosure;
[0084] refer to Figure 9 , the conversion efficiency of the designed basic unit is above 90% in the frequency range of 12.68~19.77 GHz, which indicates that the designed Peltier temperature control unit has good polarization conversion efficiency in the simulation frequen...
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Abstract
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