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Temperature control method, memory storage device and memory control circuit unit

A temperature control method and storage device technology, applied in the field of temperature control method, memory storage device and memory control circuit unit, capable of solving problems such as operation limitation of rewritable non-volatile memory modules, influence on data reliability, etc.

Pending Publication Date: 2021-10-22
PHISON ELECTRONICS
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

If the temperature of the rewritable non-volatile memory module is too high, it may seriously affect the reliability of the data stored in the rewritable non-volatile memory module
However, if an overly strict temperature control threshold is used to control the timing of the cooling operation, it may cause unnecessary restrictions on the operation of the rewritable non-volatile memory module that is still in a healthy state.

Method used

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  • Temperature control method, memory storage device and memory control circuit unit
  • Temperature control method, memory storage device and memory control circuit unit
  • Temperature control method, memory storage device and memory control circuit unit

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Embodiment Construction

[0033] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.

[0034]Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module (rewritable non-volatile memory module) and a controller (also called a control circuit). A memory storage device can be used with a host system such that the host system can write data to or read data from the memory storage device.

[0035] figure 1 It is a schematic diagram showing a host system, a memory storage device and an input / output (I / O) device according to an exemplary embodiment of the present invention. figure 2 It is a schematic diagram showing a host system, a memory storage device and an I / O device according to an exemplary embodiment o...

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Abstract

The invention provides a temperature control method, a memory storage device and a memory control circuit unit. The method comprises the following steps: detecting system parameters of the memory storage device, wherein the system parameters reflect the loss degree of a rewritable nonvolatile memory module in the memory storage device; determining a temperature control threshold value according to the system parameters; and in response to the temperature of the memory storage device reaching the temperature control threshold value, executing a cooling operation to reduce the temperature of the memory storage device. Therefore, the working efficiency of the memory storage device and the temperature control mechanism can be better balanced.

Description

technical field [0001] The invention relates to a temperature control technology, and in particular to a temperature control method, a memory storage device and a memory control circuit unit. Background technique [0002] Portable electronic devices such as mobile phones and notebook computers have grown rapidly in recent years, and consumers' demand for storage media has also increased rapidly. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for built-in Among the various portable electronic devices listed above. [0003] Rewritable non-volatile memory modules have very high requirements for temperature control. If the temperature of the rewritable nonvolatile memory module is too high, the reliability of data stored in the rewritable nonvolatile memory module may be seriously affected. However, if an overly strict tempera...

Claims

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Application Information

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IPC IPC(8): G06F1/3234G11C16/26
CPCG06F1/3275G11C16/26
Inventor 叶育宏林昀佑
Owner PHISON ELECTRONICS
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