Semiconductor device, forming method thereof and semiconductor memory device
A technology of semiconductors and oxide semiconductors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, read-only memories, etc., and can solve problems such as device performance degradation and cumulative damage to tunnel dielectrics
Pending Publication Date: 2021-10-22
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
While flash memory devices may be advantageous due to being non-volatile devices, flash memory devices are prone to device degradation over time after repeated use
Repeated use over time can cause cumulative damage to the tunnel dielectric
Method used
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Embodiment Construction
[0072] The present invention provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the embodiments and / or configur...
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Abstract
A semiconductor device includes: a metal oxide semiconductor channel layer; a first gate dielectric layer in contact with a first portion of the main surface of the metal oxide semiconductor channel layer; a first gate electrode over the first gate dielectric layer and in contact with a second portion of the main surface of the metal oxide semiconductor channel layer; a drain region and a backside gate dielectric layer in contact with the other main surface of the metal oxide semiconductor channel layer; a backside gate electrode in contact with the backside gate dielectric layer; a second gate dielectric layer in contact with an end surface of the metal oxide semiconductor channel layer; a second gate electrode in contact with a surface of the second gate dielectric layer; and a source region in contact with the other end surface of the metal oxide semiconductor channel layer. The embodiment of the invention also relates to a forming method of the semiconductor device and a semiconductor memory device.
Description
technical field [0001] Embodiments of the present invention relate to semiconductor devices, methods of forming the same, and semiconductor memory devices. Background technique [0002] Memory devices that use stored charge include volatile dynamic random access memory devices. Such volatile DRAM devices require periodic refreshing of the stored charge. Other memory devices may include non-volatile flash memory devices that use charge tunneling. While flash memory devices may be advantageous because they are non-volatile devices, flash memory devices are prone to device performance degradation over time after repeated use. Repeated use over time can lead to cumulative damage to the tunnel dielectric. Therefore, nonvolatile memory devices that can provide longer endurance than flash memory devices are desired. Contents of the invention [0003] An embodiment of the present invention provides a semiconductor device comprising: a metal oxide semiconductor channel layer ha...
Claims
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IPC IPC(8): H01L29/78H01L29/788H01L29/10H01L29/423H01L21/34H01L27/11519H01L27/11521H01L27/11551H10B41/10H10B41/20H10B41/27H10B41/30H10B41/35H10B99/00
CPCH01L29/7831H01L29/788H01L29/1033H01L29/42356H01L29/66969H10B41/10H10B41/20H10B41/30H01L29/7869G11C16/0408G11C16/10G11C16/26G11C11/401H01L29/78648H10B12/00H10B12/05H01L29/7856H01L21/82345H01L21/823885H10B99/00H01L29/42324H01L29/7889G11C16/0433H01L29/66825H10B41/27H10B41/35H01L2924/13084
Inventor 姜慧如林仲德
Owner TAIWAN SEMICON MFG CO LTD