Nonvolatile programmable heterojunction memory
A non-volatile, heterojunction technology, applied in the field of semiconductors, can solve the problem of single function of traditional photodetectors, and achieve the effect of photoelectric testing, low power consumption, and power consumption
Pending Publication Date: 2021-11-02
SHANGHAI INTEGRATED CIRCUIT MFG INNOVATION CENT CO LTD
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Problems solved by technology
[0003] Traditional photodetectors have a single function and only have the function of photoelectric conversion, which cannot meet the higher requirements for smart sensors in the era of massive information. significance
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[0021] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other el...
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The invention provides a nonvolatile programmable heterojunction memory which comprises a control gate layer, a first dielectric layer, a floating gate layer, a second dielectric layer, a heterojunction channel layer and an electrode. The first dielectric layer covers the top surface of the control gate layer, the floating gate layer covers the top surface of the first dielectric layer, the second dielectric layer is arranged on the upper side of the floating gate layer, the heterojunction channel layer comprises a first semiconductor and a second semiconductor, at least one of the first semiconductor and the second semiconductor is a bipolar semiconductor, the first semiconductor and the second semiconductor jointly cover the top surface of the second dielectric layer, the electrode covers a part of the top surface of the heterojunction channel layer, so that control gate voltage applied to the control gate layer can realize continuous logic change and storage of the heterojunction channel layer between different PN junctions and non-PN junctions, low-power-consumption photoelectric testing is realized, and integration of sensing, storage and calculation functions is realized.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a nonvolatile programmable heterojunction memory. Background technique [0002] In the era of the Internet of Things, the acquisition and processing of massive data has put enormous pressure on information transmission capabilities, information processing speed, and energy consumption. The development of edge computing and storage has become one of the effective ways to solve this problem. The integrated new smart sensor realizes information acquisition, processing and storage in the device, which is of great significance to improve the energy efficiency of the system, reduce signal delay, and meet the growing demand for massive data acquisition and processing in the Internet of Everything era. Vision is one of the main sources of information acquisition, and one of its main core parts is a photodetector. [0003] Traditional photodetectors have a single function and only...
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Patent Timeline
Login to View More IPC IPC(8): H01L27/11517H01L27/11521H01L29/788H01L29/10H01L29/267
CPCH01L29/788H01L29/1033H01L29/267H10B41/00H10B41/30
Inventor 张增星盛喆余睿
Owner SHANGHAI INTEGRATED CIRCUIT MFG INNOVATION CENT CO LTD