Band-gap reference voltage circuit

Abstract

The invention provides a band-gap reference voltage circuit. The band-gap reference voltage circuit comprises: a non-linear current generation unit for generating non-linear current; a reference voltage generation unit which is used for converting the nonlinear current generated by the nonlinear current generation unit into reference voltage; and a zero-temperature-coefficient current generation unit which converts the reference voltage into zero-temperature-coefficient current and outputs the zero-temperature-coefficient current to the nonlinear current generation unit for current compensation. The band-gap reference voltage circuit has the advantages of being improved on the basis of a traditional structure, simple in structure, easy to achieve, low in cost and high in reliability. The temperature coefficient of the band-gap reference voltage obtained after compensation is very small, and the band-gap reference voltage can meet more application occasions; the band-gap reference voltage circuit can be widely applied to circuit modules or systems with extremely high precision requirements, such as high-precision ADCs, high-precision sensors, battery monitoring management chips and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor chips, and in particular relates to a bandgap reference voltage circuit. Background technique [0002] Common bandgap reference circuits are based on traditional voltage-mode and current-mode bandgap reference structures, using ΔV EB Non-linear characteristics with respect to temperature, exploiting collector current mismatch, in ΔV EB Zhongtong introduces a high-order temperature compensation term related to the logarithmic function to adjust V EB Compensate the high-order temperature non-linear term in the circuit, so as to obtain a high-precision reference voltage. [0003] The basic idea of ​​a bandgap reference is to eliminate the base-emitter voltage V of a bipolar transistor EB The temperature-dependent term in , yields the bandgap voltage. V EB for [0004] [0005] where V G0 is the deduced bandgap voltage of silicon at 0K Kelvin temperature, T is the Kelvin absolute temperature, T0...

AI Technical Summary

Problems solved by technology

However, the range that can be compensated by the first-order linear compensation is limited, and the temperature coefficient of the reference voltage can be reduced to 16ppm / °C at most. In many applications, if it needs to be applied to battery monitoring applications, the compensated voltage cannot meet the working requirements.

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