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Semiconductor structure and forming method thereof

A technology for semiconductor and gate stacks, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., which can solve problems such as unsatisfactory GaN-based devices

Pending Publication Date: 2021-11-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing GaN-based devices are far from satisfactory considering breakdown voltage and other device parameters including threshold voltage

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0018] It is believed that the following disclosure provides many different embodiments, or examples, for implementing different features of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. The invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0019] Figure 1a is a cross-sectional view of one embodiment of a semiconductor structure (or device structure) 100 having gallium nitride (GaN) based transistors. Figure 1b is a cross-sectional view of one embodiment of a semiconductor structure 180 with GaN-based devices. Figure 2a to Figure 8a is a combination of various embodiments according to the present invention in Figur...

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Abstract

The invention provides a semiconductor structure. The semiconductor structure comprises a gallium nitride (GaN) layer located on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; a gate stack disposed on the AlGaN layer; a source feature and a drain feature disposed on the AlGaN layer and interposed by the gate stack; the dielectric material layer is arranged on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, where the field plate includes a stepped structure. The embodiment of the invention also relates to a method for forming the semiconductor structure.

Description

technical field [0001] Embodiments of the present application relate to semiconductor structures and methods of forming the same. Background technique [0002] In semiconductor technology, due to its properties, gallium nitride (GaN) is used to form various integrated circuit devices, such as high power field effect transistors, high frequency transistors or high electron mobility transistors (HEMTs). In some instances, GaN-based devices are used in integrated circuits for high breakdown voltage and low on-resistance. However, breakdown voltage is related to various factors. Considering breakdown voltage and other device parameters including threshold voltage, existing GaN-based devices are far from satisfactory. Therefore, there is a need for a structure of a GaN-based device having an enhanced breakdown voltage and a method of manufacturing the same for solving the above-mentioned problems. Contents of the invention [0003] Some embodiments of the present application...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/40H01L21/335H01L21/28
CPCH01L29/778H01L29/402H01L29/66462H01L21/28H01L29/7786H01L29/2003H01L29/1066H01L29/10H01L29/205H01L29/401H01L29/7787
Inventor 王炜杨伟臣张耀中苏如意林彦谷邹权炜蔡俊琳
Owner TAIWAN SEMICON MFG CO LTD