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Energy storage capacitor and preparation method thereof

An energy storage and capacitor technology, applied in capacitors, electric solid devices, circuits, etc., can solve the problems of difficult energy storage efficiency of capacitors, prone to cracks, and smaller breakdown of antiferroelectric layers.

Pending Publication Date: 2021-11-23
FUDAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The patent application sets up a double antiferroelectric interlayer structure. It can be seen that during the charging and discharging process of the antiferroelectric memory in the patent application, the antiferroelectric layer will generate huge strain and easily generate cracks, which makes the antiferroelectric layer break down. Smaller and shorter actual life, making it difficult to further improve the energy storage efficiency of capacitors

Method used

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  • Energy storage capacitor and preparation method thereof
  • Energy storage capacitor and preparation method thereof
  • Energy storage capacitor and preparation method thereof

Examples

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preparation example Construction

[0069] The present invention also provides the preparation method of the energy storage capacitor, referring to Figure 7 , including the following steps:

[0070] S1: After the first trench structure is opened on the substrate, an insulating layer covering the inner wall and top surface of the first trench structure is formed by using a thermal oxidation method;

[0071] S2: Forming the bottom electrode, the ferroelectric thin film, the antiferroelectric thin film and the top electrode sequentially stacked on the second trench structure by using an atomic layer deposition method.

[0072] In the step S1 of some embodiments, the step of opening the first trench structure on the substrate includes: controlling the aspect ratio of the first trench structure opened on the substrate to be 1: 1-100: 1.

[0073] In the step S2 of some embodiments, refer to Figure 8 The step of forming the bottom electrode, the ferroelectric thin film, the antiferroelectric thin film and the top ...

Embodiment 1

[0086] Embodiment 1 provides an energy storage capacitor, which is a three-dimensional energy storage capacitor based on ferroelectric antiferroelectric coupling.

[0087] In the energy storage capacitor of embodiment 1, the constituent material of the substrate is Si, and the constituent material of the insulating layer is SiO 2 , also includes the SiO 2 The bottom electrode of the insulating layer; the ferroelectric thin film arranged on the bottom electrode; the antiferroelectric thin film arranged on the ferroelectric thin film; the top layer electrode arranged on the antiferroelectric thin film.

[0088] In the step S1 of the first embodiment, the aspect ratio of the first groove structure of the substrate is 20:1, and the inner wall is smooth.

[0089] In the step S1, a layer of SiO is oxidized on the surface of the substrate by a thermal oxidation method. 2 As an insulating layer, the thermal oxidation temperature is controlled to be 950°C, and the oxidant is H 2 O a...

Embodiment 2

[0098] Embodiment 2 provides an energy storage capacitor, which is a three-dimensional energy storage capacitor based on ferroelectric antiferroelectric coupling.

[0099] In the energy storage capacitor of embodiment 2, the constituent material of the substrate is Si, and the constituent material of the insulating layer is SiO 2 , also includes the SiO 2 The bottom electrode of the insulating layer; the ferroelectric thin film arranged on the bottom electrode; the antiferroelectric thin film arranged on the ferroelectric thin film; the top layer electrode arranged on the antiferroelectric thin film.

[0100] In the step S1 of Example 2, the aspect ratio of the first groove structure of the substrate is 20:1, and the inner wall is smooth.

[0101] In the step S1, a layer of SiO is oxidized on the surface of the substrate by a thermal oxidation method. 2 As an insulating layer, the thermal oxidation temperature is controlled to be 950°C, and the oxidant is H 2 O and O 2 , O...

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Abstract

The invention provides an energy storage capacitor. The energy storage capacitor comprises a substrate, an insulating layer, a bottom electrode, a ferroelectric film, an anti-ferroelectric film and a top electrode. The substrate is provided with a first groove structure, and the insulating layer covers the inner wall and the top surface of the first groove structure to form a second groove structure; the bottom layer electrode, the ferroelectric film, the anti-ferroelectric film and the top layer electrode are sequentially stacked in the second groove structure to form different groove structures, and one groove structure of two adjacent groove structures covers the inner wall and the top surface of the other groove structure, so that the maximum polarization intensity and the breakdown electric field intensity are improved; therefore, the energy storage density of the dielectric capacitor is improved. The invention also provides a preparation method of the energy storage capacitor.

Description

technical field [0001] The invention relates to the field of micro-nano electronic materials and functional devices, in particular to an energy storage capacitor and a preparation method thereof. Background technique [0002] Dielectric capacitors generally use the polarization of dipoles in the dielectric to store electrical energy, and have extremely high power density, that is, ultra-fast charge and discharge rates, which are not available in other types of energy storage systems such as batteries or electrochemical capacitors. intrinsic advantage. And as a pure solid-state material, dielectric capacitors also have great advantages over batteries and electrochemical capacitors in terms of maximum operating voltage, charge-discharge rate, output power, cycle life, leakage current, and ease of manufacture. However, due to its relatively low energy storage density, its application range in scenarios requiring large energy density is limited. Therefore, if the energy storage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L49/02H10N97/00
CPCH01L28/40H01L28/82
Inventor 丁士进何玉立吴小晗张卫
Owner FUDAN UNIV