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Heterostructure and light-emitting device employing the same

A technology of heterogeneous structures and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of lack of free electrons and hole carriers

Active Publication Date: 2021-11-26
BOLB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The most important functionality is electrical conductivity, which becomes increasingly challenging for Al-rich AlGaN materials because the activation energies of donors and acceptors increase with Al composition, resulting in a lack of free electrons and hole carriers

Method used

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  • Heterostructure and light-emitting device employing the same
  • Heterostructure and light-emitting device employing the same
  • Heterostructure and light-emitting device employing the same

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Embodiment Construction

[0142] Throughout this specification, the term "Group III nitride" generally refers to a metal nitride having a cation selected from Group IIIA of the Periodic Table of Elements. That is, III-nitrides include AlN, GaN, InN and their ternary (AlGaN, InGaN, InAlN) and quaternary (AlInGaN) alloys. In this specification, if one of the group III elements is so small that its presence has little or negligible effect on bulk material properties such as lattice constant, bandgap, and conductivity, then for simplicity, Four yuan reduced to three yuan. For example, if the In composition in quaternary AlInGaN is extremely small, less than 1%, then the AlInGaN quaternary can be simplified into ternary AlGaN. In the same way, if one of the group III elements is extremely small, then the ternary can be reduced to a binary. For example, if the In composition in ternary InGaN is extremely small, less than 1%, then the InGaN ternary can be simplified to binary GaN. Group III nitrides may al...

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Abstract

The invention provides heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.

Description

technical field [0001] The present disclosure relates generally to semiconductor light emitting technology, and more particularly to heterostructures for light emitting devices or photodetectors, and to light emitting devices and photodetectors having heterostructures. Background technique [0002] Nitride semiconductors such as InN, GaN, AlN and their ternary and quaternary alloys depending on the alloy composition enable ultraviolet (UV) radiation from 410 nm to approximately 200 nm. These include UVA (400-315nm) radiation, UVB (315-280nm) radiation and some UVC (280-200nm) radiation. UVA radiation has revolutionized the curing industry, and UVB and UVC radiation are expected to be widely used in the food, water and surface disinfection industries due to their germicidal effects. UV light emitters made of nitrides have inherent advantages over traditional UV light sources such as mercury lamps. In general, nitride UV emitters are robust, compact, spectrally tunable, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L31/109H01L31/0352H01L31/0304
CPCH01L33/06H01L33/32H01L31/109H01L31/035236H01L31/03048H01L33/325H01L31/035263
Inventor 张剑平高英周瓴
Owner BOLB