GaN compatible driving circuit

A technology of compatible drive and circuit, which is applied in the field of GaN compatible drive circuit, can solve the problems of not being able to drive GaN devices without integrated drive, low on-resistance and gate charge, and demanding drive performance, achieving convenient iteration, high reliability, low cost effect

Pending Publication Date: 2021-11-26
SHENZHEN FAHOLD ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Gallium nitride (GaN) power devices have been rapidly developed in high switching speed and high power density applications. GaN has lower on-resistance and gate charge than traditional silicon-based MOSFETs, especially when working at high switching frequencies. The application in GaN devices with a series structure makes its driving performan

Method used

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  • GaN compatible driving circuit
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Examples

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Comparison scheme
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Example Embodiment

[0037] Example 1

[0038] Refer figure 1 The GaN-compatible drive circuit includes a drive chip IC, the MOS drive module 1, and the GaN drive compatible module 2. The driving end of the drive chip IC is connected to the input of the MOS drive module 1, and the GaN drive compatible module 2 includes a voltage limit unit 21, an acceleration unit. 22 and the output terminal of the voltage pressure unit 23, the voltage limit unit 21 and the output terminal of the MOS drive module 1, the output terminal of the voltage pressure unit 21, and the gate of the voltage divider unit 23, the gate of the n-type field effect tube, The output terminal of the partition unit 23 and the source of the N-type field effect tube, the drive chip IC connection, the acceleration unit 22, and the restriction unit 21 are connected in parallel.

[0039] In the present embodiment, the MOS drive module 1 includes a first resistor Ra, a diode D1, and a second resistor Rb, one end of the first resistor RA and the...

Example Embodiment

[0052] Example 2

[0053] Refer figure 2 The present embodiment differs from the first embodiment in that the number of restricted resistors is plural, and the plurality of restriction resistors are connected in series or in parallel.

Example Embodiment

[0054] Example 3

[0055] Refer image 3 The present embodiment differs from the first embodiment in that the number of accelerated capacitance Cb is plural, and the plurality of acceleration capacitance Cb are connected in parallel.

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Abstract

The invention discloses a GaN compatible driving circuit, and belongs to the technical field of semiconductor devices, the GaN compatible driving circuit comprises a driving chip IC, an MOS driving module and a GaN driving compatible module, the driving end of the driving chip IC is connected with the input end of the MOS driving module, the GaN driving compatible module comprises a voltage limiting unit, an acceleration unit and a voltage dividing unit, the input end of the voltage limiting unit is connected with the output end of the MOS driving module, the output end of the voltage limiting unit is connected with the input end of the voltage dividing unit and the grid electrode of the N-type field effect transistor, the output end of the voltage dividing unit is connected with the source electrode of the N-type field effect transistor and the driving chip IC, and the acceleration unit is connected with the voltage limiting unit in parallel. The method has the effect that the GaN and the silicon-based MOSFET can be driven in a compatible mode.

Description

technical field [0001] The present application relates to the technical field of semiconductor devices, in particular to a GaN compatible driving circuit. Background technique [0002] Gallium nitride (GaN) power devices have been rapidly developed in high switching speed and high power density applications. GaN has lower on-resistance and gate charge than traditional silicon-based MOSFETs, especially when working at high switching frequencies. The application in GaN devices with a series structure makes its driving performance more demanding. The traditional driving MOSFET circuit can no longer drive GaN devices without integrated drivers. In order to solve this problem, a dedicated GaN driver chip or GaN power devices with integrated drive modules are used to adapt to the drive level of traditional chips in the market, and the application of traditional chips is limited. Contents of the invention [0003] In order to drive gallium nitride and silicon-based MOSFETs compa...

Claims

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Application Information

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IPC IPC(8): H03K17/687
CPCH03K17/687Y02B70/10
Inventor 林家飞薄文钊尹位扬
Owner SHENZHEN FAHOLD ELECTRONICS CO LTD
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