GaN compatible driving circuit

Abstract

The invention discloses a GaN compatible driving circuit, and belongs to the technical field of semiconductor devices, the GaN compatible driving circuit comprises a driving chip IC, an MOS driving module and a GaN driving compatible module, the driving end of the driving chip IC is connected with the input end of the MOS driving module, the GaN driving compatible module comprises a voltage limiting unit, an acceleration unit and a voltage dividing unit, the input end of the voltage limiting unit is connected with the output end of the MOS driving module, the output end of the voltage limiting unit is connected with the input end of the voltage dividing unit and the grid electrode of the N-type field effect transistor, the output end of the voltage dividing unit is connected with the source electrode of the N-type field effect transistor and the driving chip IC, and the acceleration unit is connected with the voltage limiting unit in parallel. The method has the effect that the GaN and the silicon-based MOSFET can be driven in a compatible mode.

Description

technical field [0001] The present application relates to the technical field of semiconductor devices, in particular to a GaN compatible driving circuit. Background technique [0002] Gallium nitride (GaN) power devices have been rapidly developed in high switching speed and high power density applications. GaN has lower on-resistance and gate charge than traditional silicon-based MOSFETs, especially when working at high switching frequencies. The application in GaN devices with a series structure makes its driving performance more demanding. The traditional driving MOSFET circuit can no longer drive GaN devices without integrated drivers. In order to solve this problem, a dedicated GaN driver chip or GaN power devices with integrated drive modules are used to adapt to the drive level of traditional chips in the market, and the application of traditional chips is limited. Contents of the invention [0003] In order to drive gallium nitride and silicon-based MOSFETs compa...

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Problems solved by technology

[0002] Gallium nitride (GaN) power devices have been rapidly developed in high switching speed and high power density applications. GaN has lower on-resistance and gate charge than traditional silicon-based MOSFETs, especially when working at high switching frequencies. The application in GaN devices with a series structure makes its driving performance more demanding. The traditional driving MOSFET circuit can no longer drive GaN devices without integrated drivers. In order to solve this problem, a dedicated GaN driver chip or GaN power devices with integrated drive modules are used to adapt to the drive level of traditional chips in the market, and the application of traditional chips is limited

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