Open-circuit fault diagnosis method, computer equipment and storage medium

Abstract

The invention relates to the technical field of fuzzy testing of TSV reliability detection, and discloses an open-circuit fault diagnosis method, computer equipment and a storage medium. The method comprises the steps: obtaining test feature parameters of a to-be-tested sample; obtaining standard characteristic parameters of the standard sample; comparing the test characteristic parameters with the standard characteristic parameters, and determining a defect model of the to-be-tested sample; establishing a three-dimensional simulation model of the to-be-tested sample, wherein the three-dimensional simulation model comprises a defect model for simulating an open-circuit fault; and determining the defect physical size and the open-circuit fault position of the open-circuit fault of the to-be-tested sample according to the three-dimensional simulation model and the test characteristic parameters. According to the open-circuit fault diagnosis method provided by the invention, statistical characteristics of characteristic parameters of ideal samples and defect samples are extracted, and methods such as simulation, microwave testing and curve fitting are adopted to determine the sizes of the defects and position the defects, so that the fault diagnosis process is systematically and logically simplified.

Description

technical field [0001] The invention relates to the technical field of TSV reliability detection, in particular to an open circuit fault diagnosis method, computer equipment and a storage medium. Background technique [0002] Micro-nano defect location is an important part of TSV interconnection failure analysis and process optimization proposal. Therefore, it is very important to extract effective fault characteristics through the combination of electrical parameter information and the integration of detection, simulation and theory. It is the key to improve TSV interconnection The key to the efficiency of even defect failure analysis. However, existing microscopic imaging techniques have the problem that the types and sizes of detectable TSV defects are largely limited by X-ray instruments. It can only detect void defects. For high-density TSV interconnections in three-dimensional integrated circuits, it is difficult for low-precision X-ray inspection instruments to detec...

AI Technical Summary

Problems solved by technology

However, existing microscopic imaging techniques have the problem that the types and sizes of detectable TSV defects are largely limited by X-ray instruments

It can only detect void defects. For high-density TSV interconnections in three-dimensional integrated circuits, it is difficult for low-precision X-ray inspection instruments to detect extremely small-sized interconnection defects. High-precision X-ray image processing takes a long time

The shortcomings of the above-mentioned TSV fault diagnosis method hinder the diagnosis rate of high-density TSV interconnection defect characteristics of 3D integrated circuits, affect the efficiency of failure analysis and reliability evaluation, and hinder the research of TSV-based 3D integrated circuit reliability improvement technology

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