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Power module

A technology of power modules and power semiconductors, applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., to achieve the effect of suppressing reliability and clear structure

Pending Publication Date: 2021-12-28
HITACHI POWER SEMICON DEVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the case of a wire bonding structure, a large number of wires need to be connected as the capacity increases

Method used

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Embodiment 1

[0036] refer to Figure 1 to Figure 6 , the power module according to Embodiment 1 of the present invention will be described. figure 1 It is a sectional view showing a schematic structure of the power module 1 of this embodiment. figure 2 yes figure 1 The enlarged view of part A of , is shown in a perspective view for easy understanding of the shape. image 3 It is a figure which conceptually shows the effect of this invention. Additionally, from Figure 4 to Figure 6 , means figure 1 Figures of three modification examples (modification example 1 to modification example 3) of .

[0037] Such as figure 1 As shown, the power module 1 of this embodiment includes a resin case 2 in which a power semiconductor chip and a circuit board are housed. The housing 2 functions as a protective cover for the power module 1 .

[0038] In addition, the power module 1 includes a base plate 3 made of metal, substrates 6 and 12 arranged on the base plate 3, power semiconductor chips ...

Embodiment 2

[0058] refer to Figure 7 ~ Figure 10 , the power module according to Embodiment 2 of the present invention will be described. Figure 7 ~ Figure 10 Changes in the upwardly convex shape and opening provided in the lead frame 17 are shown. Figure 7 It is a figure which shows the upward convex shape and the notch 22 of this Example. in addition, Figure 8 to Figure 10 yes means Figure 7 Figures of three modification examples (modification example 4 to modification example 6) of .

[0059] Such as Figure 7 As shown, the opening provided in the lead frame 17 may also be a cutout 22 . By replacing Example 1's figure 2 The shown substantially circular opening (opening portion 18 ) is provided with the notch 22 , and the opening can be formed in the lead frame 17 more easily.

[0060] In addition, in the Figure 7 When the slit 22 is provided in this way, the resistance value of the lead frame 17 increases, which may hinder the operation of the power module 1 . In this c...

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PUM

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Abstract

The present invention provides a power module which uses a plate-shaped lead frame for interconnection wiring inside the module, and which has high reliability and can suppress the generation of voids caused by bubbles generated during resin sealing. The power module is characterized by being provided with: a base plate; a substrate disposed on the base plate; a power semiconductor chip disposed on the substrate; a plate-shaped lead frame for connecting wires to each other; a case that is connected to the base plate and houses the substrate, the power semiconductor chip, and the lead frame therein; and a sealing resin filled into the case and sealing the substrate, the power semiconductor chip, and the lead frame, at least a portion of the lead frame having an upwardly convex shape, and an opening vertically penetrating the lead frame being provided at a top portion of the upwardly convex shape.

Description

technical field [0001] The present invention relates to a structure of a power module, and particularly relates to a technology effectively applied to a power module using a plate-shaped lead frame for interconnection wiring inside the module. Background technique [0002] Existing power modules are generally constructed by soldering the insulating substrate on which the power semiconductor chip is mounted to the bottom plate, and connecting the electrode surface of the power semiconductor chip and the metal circuit layer and metal terminals mounted on the insulating substrate and the housing through aluminum wires. wire bonding connections. [0003] However, in the case of a wire bonding structure, a large number of electric wires need to be connected as the capacity increases. Therefore, in recent years, an internal wiring structure in which an internal lead portion of a lead frame is extended directly above the power semiconductor chip and directly bonded to the surface ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/495H01L25/07H01L25/18
CPCH01L23/49541H01L23/49548H01L23/49551H01L25/18H01L25/072H01L23/053H01L23/24H01L23/3735H01L23/36H01L23/5385H01L24/00H01L2224/40137H01L2224/73263H01L2224/32225H01L24/40H01L2224/40139H01L24/37H01L2224/37011H01L2224/83801H01L2224/84801H01L24/83H01L24/84H01L2224/29101H01L24/29H01L24/32H01L2924/13055H01L2924/13091H01L2924/1203H01L2224/291H01L2224/844H01L2224/834H01L2224/37099H01L2224/40499H01L2924/00014H01L2924/014
Inventor 上川将行
Owner HITACHI POWER SEMICON DEVICE