Patterned substrate, preparation method thereof and LED with patterned substrate

A patterned substrate and graphics technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of poor quality of epitaxial layer growth lattice and low light extraction efficiency, so as to improve external quantum efficiency, reduce dislocation density, The effect of increasing the quality of the lattice

Pending Publication Date: 2021-12-28
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to improve the problems of poor lattice quality and low light extraction efficiency of epitaxial layer growth

Method used

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  • Patterned substrate, preparation method thereof and LED with patterned substrate
  • Patterned substrate, preparation method thereof and LED with patterned substrate
  • Patterned substrate, preparation method thereof and LED with patterned substrate

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Embodiment Construction

[0030] In order to make the purpose, technical solution and advantages of the present application clearer, the following will clearly and completely describe the technical solution of the present application in combination with specific implementation methods of the present application and corresponding drawings. Apparently, the described implementations are only some of the implementations of this application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0031] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the f...

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Abstract

The invention discloses a patterned substrate, a preparation method thereof and an LED with the patterned substrate. The preparation method comprises the following steps: S1, providing a substrate; S2, performing first etching on the substrate to obtain a first patterned substrate with a bulge of a first pattern; and S3, carrying out second etching on a base gap between the adjacent patterns on the C surface between the first patterns of the first patterned substrate to obtain a pit with a second pattern, and forming a second patterned substrate with the first pattern and the second pattern. According to the method, the growth time of the epitaxial layer on a C surface (a base gap between adjacent patterns) can be prolonged through the secondarily etched inverted patterned pit, the stress is released, the side wall of the inverted patterned pit is a non-polar surface, the dislocation density is reduced, and the lattice quality of the epitaxial layer grown on the inverted patterned pit is improved; in addition, light reflection can be increased, the light emitting rate is improved, and therefore the external quantum efficiency is improved.

Description

technical field [0001] The invention relates to a patterned substrate, a preparation method thereof and an LED with the same, in particular to a patterned substrate with low growth dislocation density and high light extraction rate, a preparation method thereof and an LED with the same. Background technique [0002] A patterned substrate is a substrate with a patterned surface formed on a flat substrate by using processes such as photomask and etching. On the one hand, the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer and improve the quality of the epitaxial material. The crystal quality improves the internal quantum luminous efficiency of light-emitting diodes; on the other hand, the patterned structure increases the scattering of light and improves the external quantum efficiency. [0003] In existing patterned substrates, such as figure 1 As shown, the protrusion array 2 is grown on the substrate 1', as shown in the d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/06H01L33/02H01L33/00
CPCH01L33/22H01L33/06H01L33/025H01L33/005
Inventor 徐洋洋江汉徐志军黎国昌程虎王文君苑树伟
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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