Method for mapping symbolic numbers on memristor array

A mapping method and memristor technology, applied in the fields of instruments, static memory, digital memory information, etc., can solve the problems of reducing generality, loss of minimum negative values, poor calculation results, etc., to achieve strong versatility and low consumption. Effect

Active Publication Date: 2021-12-31
ZHEJIANG LAB
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the process of matrix calculation through memristors, for the mapping of neural network weight values, on the one hand, in the prior art, signed numbers and unsigned values ​​are mapped to a positive memristor array and a negative memristor array. On the memristor array, and then calculate the difference to get

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for mapping symbolic numbers on memristor array
  • Method for mapping symbolic numbers on memristor array
  • Method for mapping symbolic numbers on memristor array

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0046]

[0047]

example 2

[0049]

[0050]

example 3

[0052]

[0053]

[0054] Such as Figure 5 As shown, the mapped value W is N=4 bits, the mapping target is a multi-valued 2-bit memristor (m=2), the decimal number is converted into a binary number, and then the target value will be mapped to 3 memristors on, respectively , , . For example, the decimal number 6 maps to is 0, is 1, is 2; decimal number 3, mapped to is 0, is 0, is 3; the decimal number -4, maps to is 1, is 1, is 0; the decimal number -7, maps to is 1, is 0, is 1. In the actual calculation process, The bit value of a symbol flag will only be 0 or 1, which can be regarded as a binary memristor, and the actual value is multiplied by the coefficient , - It can be regarded as an unsigned number, and the actual value is multiplied by the coefficient , . which is .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for mapping symbolic numbers on a memristor array, and the method comprises the steps: directly mapping the symbolic numbers on the memristor array in a complement expression form, and obtaining a mapping scheme according to the bit widths of different mapping numbers and the precision of memristors. Firstly, whether a current memristor type device is binary or multi-valued needs to be confirmed, and if the current memristor type device is a multi-valued device, the unit precision needs to be confirmed; then, the bit width of the mapped symbolic numbers is determined, and the symbolic numbers are converted into binary numbers in a complement form; and finally, a symbolic number mapping scheme is acquired. The method is suitable for neural network calculation, consumption of memristor resources occupied by the mapped symbolic numbers of the method is small, universality is high, and the numerical value coverage range is the same as the actual expression range.

Description

technical field [0001] The invention relates to the field of novel intelligent computing, in particular to a symbol number mapping method on a memristor array. Background technique [0002] At present, research on memristors is becoming more and more extensive, involving various fields, such as security, mathematics, and artificial intelligence. In the field of artificial intelligence, memristors are often used as tools and media for neural network computing, and their characteristics of high read / write speed, low power consumption, and high parallelism are fully reflected. Memristor, Memristor (Memristor) is a circuit device that represents the relationship between magnetic flux and charge. Unlike resistors, the resistance value of memristor is determined by the charge flowing through it. By measuring the resistance value of memristor, we can know The amount of charge flowing through it has the effect of memory charge. Moreover, the integration, power consumption, and rea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C13/00
CPCG11C13/0069
Inventor 顾子熙时拓张程高高丽丽王志斌李一琪
Owner ZHEJIANG LAB
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products