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Depletion MOSFET for overcurrent protection

An over-current, depletion-type technology, applied in the direction of emergency protection circuit devices for limiting over-current/over-voltage, protection reacting to over-current, emergency protection circuit devices, etc., can solve problems such as increased sensitivity

Pending Publication Date: 2021-12-31
LITTELFUSE INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Component miniaturization leads to increased susceptibility to electrical stress

Method used

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  • Depletion MOSFET for overcurrent protection
  • Depletion MOSFET for overcurrent protection
  • Depletion MOSFET for overcurrent protection

Examples

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Embodiment Construction

[0019] Several circuits for providing overcurrent protection are disclosed herein. These circuits are characterized by a depletion-mode MOSFET connected to a resistive element, the circuit includes a positive temperature coefficient (PTC) device configured in such a way that the voltage across the PTC device is the same as the gate-to-source voltage of the MOSFET . The circuit can also be configured using a transient voltage suppression (TVS) diode to clamp the drain-to-source voltage of the MOSFET during an overcurrent event. Heat transfer between the MOSFET and the PTC device helps in overcurrent protection. Two-terminal devices including depletion-mode MOSFETs, PTC devices, and TVS diodes can provide overcurrent protection to other circuits. A bidirectional circuit comprising two MOSFETs arranged on both sides of the PTC is also conceived for AC voltage overcurrent protection. In an exemplary embodiment, a combination of PTCs plus depletion mode MOSFETs are included in t...

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Abstract

The invention discloses a depletion mode MOSFET for over-current protection. A circuit is characterized by a depletion-mode MOSFET, preferably a positive temperature coefficient (PTC) device, connected to the resistive element, configured in such a way that the voltage on the PTC device is the same as the gate-to-source voltage of the MOSFET. The circuit may also be configured using a TVS diode for clamping the drain-to-source voltage of the MOSFET during an overcurrent event. Heat transfer between the MOSFET and the PTC device contributes to overcurrent protection. A two-terminal device, including a depletion-mode MOSFET, a PTC device, and a TVS diode, may provide overcurrent protection to other circuits. The MOSFET comprises two MOSFETs arranged on both sides of the PTC is also envisaged for AC voltage overcurrent protection.

Description

Background technique [0001] Overcurrent or excess current refers to a situation in which a larger than expected current flows through a circuit. Overcurrent can be constant or transient in nature. Voltage transients (ie short duration surges of electrical energy) are the result of a sudden release of energy previously stored or caused by other means such as heavy inductive loads or lightning. Repeatable transients are usually caused by the operation of electric motors, generators, or switching of reactive circuit components. Random transients may be caused by lightning and electrostatic discharge (ElectrostaticDischarge, ESD). [0002] Component miniaturization leads to increased susceptibility to electrical stress. For example, microprocessors have structures and conductive paths that cannot handle the high currents from ESD transients. Such components operate at very low voltages, so high priority is given to controlling voltage disturbances to prevent device interruptio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/02
CPCH02H9/025H02H9/026H02H3/085H02H5/042H01L27/0251H01L29/7838H01C7/02H02H3/025H02H3/08
Inventor 秦传芳尼尔·勒琼刘志宏杜志德
Owner LITTELFUSE INC