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Electrostatic discharge protection module and device using the same

An electrostatic discharge protection and electrostatic discharge technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve problems such as inability to respond quickly, achieve good ESD robustness, maintain high voltage VH, and trigger low voltage Effect

Pending Publication Date: 2022-01-11
杭州傲芯科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional SCR-based ESD devices cannot react quickly to fast transient events in some cases (e.g. Charged Device Model CDM)

Method used

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  • Electrostatic discharge protection module and device using the same
  • Electrostatic discharge protection module and device using the same
  • Electrostatic discharge protection module and device using the same

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Embodiment Construction

[0034] The present application is described below based on examples, but the present application is not limited only to these examples. In the following detailed description of the application, some specific details are set forth in detail. The present application can be fully understood by those skilled in the art without the description of these detailed parts. To avoid obscuring the essence of the present application, well-known methods, procedures, procedures, components and circuits have not been described in detail.

[0035] Additionally, those of ordinary skill in the art will appreciate that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale.

[0036]Meanwhile, it should be understood that in the following description, "circuit" refers to a conductive loop formed by at least one element or sub-circuit through electrical connection or electromagnetic connection. When an element or circuit is said to be "connected to" anot...

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Abstract

The invention provides an electrostatic discharge protection module and a device using the same. The electrostatic discharge protection module comprises an RC detection unit and a silicon controlled rectifier unit which are connected between a first potential and a second potential, wherein the RC detection unit is used for generating a first signal and a second signal; an SCR unit is used for receiving the first signal and the second signal generated by the RC detection unit; specifically, the SCR unit further comprises a protection unit which is controlled by the first signal or the second signal output by the RC detection unit; during electrostatic discharge, the first signal generated by the RC detection unit is low level, the second signal generated by the RC detection unit is high level, the protection unit is controlled to be in a low-resistance state, the SCR unit works, a P-N-P-N path is formed, and a first current release path is provided for electrostatic current; when the circuit works normally, the first signal generated by the RC detection unit is high level, the second signal generated by the RC detection unit is low level, the protection unit is controlled to be in a high-resistance state, and the protection unit blocks the P-N-P-N path of the SCR unit, so that the SCR unit does not work.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to an electrostatic discharge protection module and a device using the same. Background technique [0002] RC trigger BIG-FET is a common electrostatic discharge (ESD) rail-clamp power protection structure, such as figure 1 As shown, it usually has a lower trigger voltage VT1, but it is difficult to apply to applications with limited leakage current or area due to the large leakage current and large area at the same time, such as microcontroller units (MCU) . Such as figure 2 As shown, the RC-triggered silicon-controlled rectifier (SCR) structure is a common ESD protection module, which has low leakage current, good area efficiency and ESD robustness, but because its holding voltage VH is too low Only suitable for low voltage applications. Stacked SCR structures or SCR structures in series with diode chains have been proven to increase the hold voltage VH, but at the same time their ...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0248H01L27/0262
Inventor 郑飞君王迪
Owner 杭州傲芯科技有限公司