Semiconductor device
A semiconductor and active area technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as the decline of the reliability of the gate insulating film, and achieve the effect of improving reliability
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Embodiment approach 1
[0028] figure 1 It is a plan view showing the structure of the semiconductor device of the first embodiment.
[0029] The semiconductor device includes a semiconductor substrate 10 , a gate electrode 30 , a gate pad 31 , finger wiring 32 , and a plurality of trench gates 20 . Also, while in figure 1 not shown, but the semiconductor device as described later figure 2 An emitter electrode 40 is shown.
[0030] The semiconductor substrate 10 includes an active region 1 , a wiring region 2 , and a termination region 3 in plan view. The active region 1 is a region provided with a plurality of transistors. The transistor in the first embodiment is an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT). The wiring region 2 is provided to surround the active region 1 . Termination region 3 is provided to surround active region 1 and wiring region 2 . The semiconductor substrate 10 in the terminal region 3 is provided with a withstand voltage holding str...
Embodiment approach 2
[0056] A semiconductor device in Embodiment 2 will be described. Embodiment 2 is a subordinate concept of Embodiment 1. In Embodiment 2, the same reference numerals are assigned to the same constituent elements as in Embodiment 1, and detailed description thereof will be omitted.
[0057] Image 6 is a plan view showing the structure of the semiconductor device in Embodiment 2, and is figure 1 Magnified view of region P shown.
[0058] The trench width W12 at the end of the trench gate 20 is wider than the trench width W11 of the active region 1 . The trench width W12 of the wiring region 2 is, for example, approximately 1.1 times greater than or equal to 2.0 times the trench width W11 of the active region 1 . The thickness Tox of the gate insulating film 21 in the active region 1 and the wiring region 2 is constant.
[0059] The trench gate 20 includes a transition region in which the trench width of the wiring region 2 gradually becomes wider toward the end. The transi...
Embodiment approach 3
[0065] A semiconductor device in Embodiment 3 will be described. Embodiment 3 is a subordinate concept of Embodiment 1. In Embodiment 3, the same reference numerals are assigned to the same components as those in Embodiment 1 or 2, and detailed description thereof will be omitted.
[0066] Figure 7 is a plan view showing the structure of the semiconductor device in Embodiment 3, and is figure 1 Magnified view of region P shown. As in the second embodiment, the trench width W12 at the end of the trench gate 20 is wider than the trench width W11 at the active region 1 .
[0067] In Embodiment 3, the thickness Tox2 of the gate insulating film 21 in the transition region and the end portion is thicker than the thickness Tox of the gate insulating film 21 in the active region 1 . The thickness Tox of the gate insulating film 21 is, for example, greater than or equal to 10 nm and less than or equal to 200 nm. The thickness Tox2 of the gate insulating film 21 is, for example, a...
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Abstract
Description
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Application Information
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