Light emitting device

Abstract

A light-emitting device includes a die bonding substrate, a light-emitting semiconductor structure, a conductive column, an insulating layer, and first and second electrodes. The die bonding substrate has opposite first and second surfaces. The light-emitting semiconductor structure comprises a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer which are located on the first surface from bottom to top. The conductive column is located in the light-emitting semiconductor structure. The conductive column penetrates through the first type semiconductor layer and the light emitting layer, but does not penetrate through the second type semiconductor layer, is in contact with the second type semiconductor layer and is electrically connected with the die bonding substrate. A first portion of the insulating layer is located between the first type semiconductor layer and the die bonding substrate, and a second portion of the insulating layer electrically insulates the first type semiconductor layer and the light emitting layer from the conductive column. The first portion has a trench adjacent to an edge of the light emitting semiconductor structure and a plurality of openings having a width smaller than a width of the conductive column. The first electrode is located on the first surface, is electrically connected with the first type semiconductor layer and electrically insulates the conductive columns. The second electrode is located on the second surface and electrically connected with the conductive column.

Description

technical field [0001] The present invention relates to a light emitting device, in particular to a light emitting device capable of optimizing current spreading. Background technique [0002] A light-emitting diode (Light-emitting diode, LED) is essentially a diode with a P-N junction (P-Njunction), which emits photons through the combination of electron-hole pairs when the element acts. In addition, light-emitting diodes have the advantages of energy saving, long life cycle and environmental protection, so they have become one of the booming industries in recent years. Generally speaking, different light-emitting diodes can have different chip structures according to the light source system and purpose of use, such as faceup LED (FaceUp LED), vertical LED (Vertical LED), and flip-chip LED (Flip Chip LED); Surface can be roughly divided into side view LED (Side View LED) and top view LED (Top View LED). [0003] In order to improve the luminous efficiency of vertical LED ...

AI Technical Summary

Problems solved by technology

[0003] In order to improve the luminous efficiency of vertical LED and flip-chip LED light-emitting devices, a patterned current blocking layer is usually added between the semiconductor stack and the reflective layer, but this patterned current blocking layer will have the following disadvantages: 1. Since the generated current is mainly concentrated in the opening area of ​​the n-type conductive pillar and the patterned current blocking layer, the epitaxial recombination efficiency above the above-mentioned area will be deteriorated under high current density, thereby causing uneven brightness of the light-emitting device. question

2. Because the thermal expansion coefficient of the patterned current blocking layer is very different from the semiconductor layer above it and the reflective layer below it, it is easy to cause poor product yield during the manufacturing process, and when the reliability test is performed, the gap between the aforementioned film layers will be caused. There is a gap between them, causing reliability problems of the product

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