Semiconductor epitaxial structure and preparation method thereof

Abstract

The invention provides a semiconductor epitaxial structure and a preparation method thereof. The preparation method of the semiconductor epitaxial structure comprises the steps of forming a semiconductor epitaxial structure on the surface of an accessory in a cavity of epitaxial growth equipment, wherein the method for forming the semiconductor epitaxial structure comprises the steps of forming an adhesive semiconductor layer on the surface of the accessory; forming a gettering transition semiconductor layer on the surface of the side, which is opposite to the accessory, of the adhesive semiconductor layer; and forming a first base layer semiconductor material layer on the side, which is back to the adhesive semiconductor layer, of the gettering transition semiconductor layer. The adhesion between the material of the adhesive semiconductor layer and the accessory is greater than the adhesion between the material of the gettering transition semiconductor layer and the accessory. The preparation method of the semiconductor epitaxial structure enables epitaxial growth to be high in efficiency and low in cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor epitaxial structure and a preparation method thereof. Background technique [0002] Metal-organic vapor deposition (MOCVD) technology is a commonly used production method for III-V semiconductor materials at the present stage, but the particles falling off the surface of graphite and quartz parts in the reaction chamber of MOCVD machines and the epitaxial defects caused by them have always troubled semiconductor materials. A difficult problem in epitaxial growth, which is mainly due to the drop of particles in the reaction chamber and the resulting epitaxial defects will cause a series of reliability problems such as power drop, functional failure, and shortened life of III-V semiconductor materials in subsequent use. . When III-V semiconductor materials are used in miniaturized, integrated, and energy-efficient devices or scenarios, more stringent require...

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problems of low epitaxial growth efficiency and high cost in the prior art, thereby providing a semiconductor epitaxial structure and its preparation method

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