Picosecond seed source excitation device

A seed, picosecond technology, applied in the field of optics, to achieve the effects of prolonging service life, improving energy conversion efficiency, and high stability

Pending Publication Date: 2022-01-14
KEY & CORE TECH INNOVATION INST OF THE GREATER BAY AREA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional method is to use semiconductor laser end-pumped Nd:YAG&Cr 4+ : YAG bonded crystals to generate picosecond pulses, but traditional pump uniformity problems, pump spot focusing and shaping problems, return light and other problems need to be solved urgently

Method used

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  • Picosecond seed source excitation device
  • Picosecond seed source excitation device
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Embodiment Construction

[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0023] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "horizontal", "inner", "outer" etc. is based on the orientation or positional relationship shown in the drawings , is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and...

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Abstract

The invention provides a picosecond seed source excitation device, which is characterized in that a resonant cavity is formed by two end surfaces of an Nd:YAG&Cr<4+>:YAG bonding crystal, the Nd:YAG&Cr<4+>:YAG bonding crystal (4) is used as a passive Q-switching crystal, the Q value of the resonant cavity is adjusted by using the saturable absorption characteristic of the Nd:YAG&Cr<4+>:YAG bonding crystal (4) so as to achieve the Q-switching purpose, a collimating mirror (2) and a focusing mirror (3) perform beam shaping on incident pump light so as to make the pump light enter the Nd:YAG&Cr<4+>:YAG bonding crystal (4) at a specific angle and position to form a focus point in the crystal, then the divergence angle of the light beam is shaped and compressed through a concave beam expander lens (6) and a convex beam expander lens (8), and the light beam can pass through an isolator (7) in one direction, so that the influence of the return light on the crystal and the optical fiber and irreversible optical damage are avoided, and the characteristics of high energy, narrow pulse width, high light beam quality, high stability and the like are achieved so as to improve the energy conversion efficiency, reduce the device loss and prolong the service life.

Description

technical field [0001] The invention belongs to the field of optical technology, and in particular relates to a picosecond seed source excitation device. Background technique [0002] Solid-state laser MOPA amplification technology is the main means to produce high-energy, narrow-pulse width picosecond lasers, and as the most critical seed source in the MOPA amplification system, it plays an indispensable and pivotal role. Its energy, pulse width, stability, and beam quality directly affect the overall performance of the laser output after MOPA amplification. The so-called MOPA amplification technology is also called the main oscillation-power amplification technology. It provides pulses that meet the design specifications through the seed source, and its pulse width, beam quality, and stability all meet the design specifications. However, its output energy is low, so it is necessary to effectively amplify the energy of the seed source through MOPA amplification technology....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/094H01S3/0941H01S3/06H01S3/16
CPCH01S3/094049H01S3/094053H01S3/09415H01S3/0602H01S3/1611H01S3/1623H01S3/1643
Inventor 关鹏张普陈旭光朱香平赵卫
Owner KEY & CORE TECH INNOVATION INST OF THE GREATER BAY AREA
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