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Manufacturing method and structure of self-aligned power Trench MOSFET

A manufacturing method and self-alignment technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problem that TrenchPitch cannot be minimized.

Pending Publication Date: 2022-01-18
SHANGHAI FINE CHIP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] For traditional power Trench MOSFETs, the Trench and contact holes need to be formed by photolithography on two masks. Due to the need for a certain overlay spacing between the two masks and the influence of the minimum spacing of the lithography itself, the Trench Pitch (adjacent The distance between Trench) cannot be minimized

Method used

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  • Manufacturing method and structure of self-aligned power Trench MOSFET
  • Manufacturing method and structure of self-aligned power Trench MOSFET
  • Manufacturing method and structure of self-aligned power Trench MOSFET

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Embodiment Construction

[0061] The following description is given to enable a person skilled in the art to make and use the invention and incorporate it into a specific application context. Various modifications, and various uses in different applications will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to a wide range of embodiments. Thus, the present invention is not limited to the embodiments given herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0062] In the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present invention. It will be apparent, however, to one skilled in the art that the practice of the present invention need not be limited to these specific details. In other words, well-known structures and devices are shown in block diagram form and not in detail in order to avoid obscuring th...

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Abstract

The technical problem to be solved by the invention is to provide a novel power Trench MOSFET with a self-alignment structure, Trench grooves and contact holes are determined by a mask plate, and the distance between Trench Pitches (namely the distance between adjacent Trench grooves) can be greatly reduced.

Description

technical field [0001] The invention relates to the technical field of power devices, in particular to a method for manufacturing a self-aligned power Trench MOSFET and a structure thereof. Background technique [0002] In the development of power devices, power MOSFETs have always played a very important role. In terms of market share, taking 2006 as an example, power MOSFETs accounted for almost 26% of the entire power device market, and the reasons why power MOSFETs develop so rapidly are as follows: [0003] (1) High frequency: As a multi-sub-device, field effect transistors have greatly improved their frequency compared with bipolar power devices. Therefore, not only has the application of high frequencies been expanded, but it has also played a role in reducing the size of the whole machine. to a key role. [0004] (2) Convenient driving: Compared with bipolar power devices, the control method of field effect transistors is changed from current control to voltage con...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78H01L29/423
CPCH01L29/4236H01L29/7813H01L29/66734H01L29/665
Inventor 黄平鲍利华顾海颖
Owner SHANGHAI FINE CHIP SEMICON