Supercharge Your Innovation With Domain-Expert AI Agents!

Grid-controlled interface type nanofluid memristor and preparation method thereof

A memristor and fluid technology, which is applied in the field of gate-controlled interface nanofluid memristor and its preparation, can solve the problems of complicated memristor array processing technology and achieve the effect of simple processing technology

Pending Publication Date: 2022-01-18
PEKING UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this leads to a very complex fabrication process for memristor arrays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grid-controlled interface type nanofluid memristor and preparation method thereof
  • Grid-controlled interface type nanofluid memristor and preparation method thereof
  • Grid-controlled interface type nanofluid memristor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0049] The present invention also provides a preparation method of the interface-type nanofluid memristor, which includes the following steps.

[0050] First, a substrate 100 is provided.

[0051] Then, a nanochannel 600 is formed on top of the substrate 100 .

[0052] The present invention has no special limitation on the method of forming the nanochannel 600 , for example, a combination of electron beam lithography and plasma etching may be used.

[0053] Afterwards, a metal layer is formed on the bottom and sidewalls of the nanochannel and on the substrate surface on one or both sides of the nanochannel.

[0054] The method for forming the metal layer is not particularly limited in the present invention. For example, physical vapor deposition, electroplating, electron beam evaporation, and magnetron sputtering can be used to form the metal layer.

[0055] Next, a silicon dioxide layer is formed on the metal layer.

[0056] The present invention can use chemical vapor dep...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an interface type nanofluid memristor. The interface type nanofluid memristor comprises: a substrate; a nano channel arranged at the top of the substrate; a metal layer which covers the bottom and the side wall of the nano channel and covers the surface of the substrate on one side or two sides of the nano channel; and a silicon dioxide layer which covers part of the surface of the metal layer. According to the interface type nanofluid memristor, the metal layer is adopted as the grid control electrode, the influence of leakage current on other devices can be effectively prevented, and the processing technology of the memristor array formed by the memristor is quite simple compared with the prior art. In addition, the interface type nanofluid memristor serves as a nanofluid nerve synapse device, the function of an excitation type nano-fluid nerve synapse device can be achieved, and the function of an inhibition type nano-fluid nerve synapse device can also be achieved. In addition, the invention also relates to a preparation method of the interface type nanofluid memristor.

Description

technical field [0001] The invention relates to the technical field of micro-nano electronics, in particular to a gate-controlled interface type nanofluid memristor and a preparation method thereof. Background technique [0002] Nearly four decades after the memristor concept was proposed, Hewlett-Packard Labs made the first memristor based on a metal oxide. A wide variety of memristors have emerged so far, including inorganic metal oxide memristors, organic memristors, and perovskite memristors. The unique properties of memristors make them useful in low-power memory devices and neuromorphic computing. A liquid memristor is a type of memristor that uses soft materials including liquid metals, electrolytes, ionic liquids, and ionic gels. Liquid memristors have the characteristics of simple preparation, low cost and flexibility, and show great application potential in biomimetic neuromorphic computing structures. [0003] Although the memristor array can achieve a very hig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00
CPCH10N70/821H10N70/061
Inventor 张盼王玮郭业昌
Owner PEKING UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com