Novel electrostatic protection method

Abstract

The embodiment of the invention discloses a novel electrostatic protection method. The method comprises the following steps that an integrated circuit is arranged on a first chip; an electrostatic protection circuit is arranged on a second chip, and the electrostatic protection circuit comprises a first input output port, a second input contact port, a first diode, a first resistor, a first N-type field effect transistor and a ground end output port, and further comprises a second diode, a capacitor and a second N-type field effect transistor; and the first input output port is connected with the input port of the integrated circuit, so that the electrostatic protection method can realize dual protection on the integrated circuit, and the reliability of the integrated circuit is effectively ensured. Moreover, the integrated circuit and the electrostatic protection circuit are arranged on different chips, thereby avoiding the electrostatic protection design on the chip where the integrated circuit is located, and solving a problem that the electrostatic protection design cannot be carried out because of the limitation of the substrate material of the chip where the integrated circuit is located. And the electrostatic protection of a novel material integrated circuit which is sensitive to static electricity can be realized.

Description

technical field [0001] The present application relates to the technical field of integrated circuits, in particular to a novel electrostatic protection method. Background technique [0002] With the development of integrated circuit technology, its application is becoming more and more extensive, making the electrostatic protection of integrated circuits more and more important. However, in actual situations, the impact of static electricity in the environment where the integrated circuit is located on the integrated circuit is uncontrollable and unpredictable, so in order to effectively prevent the electrostatic damage of the integrated circuit, a protection method with strong electrostatic protection ability is provided , is crucial for the development of integrated circuits. [0003] Moreover, with the development of integrated circuit technology, more and more new material integrated circuits have been or will be launched soon. The substrate materials of these new mater...

AI Technical Summary

Problems solved by technology

However, these new material integrated circuits are usually very sensitive to static electricity and are prone to electrostatic damage, and these new material integrated circuits also have some limitations in the characteristics of their substrate materials, which will lead to the inability to realize the electrostatic protection design of existing integrated circuits, so that they cannot Effective electrostatic protection for such integrated circuits makes it easy to cause integrated circuit function failure due to electrostatic damage in the actual application of such integrated circuits

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