Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the steps of forming a semiconductor structure which comprises a substrate, a stacking structure located in a first direction of the substrate, a sacrificial layer located between the substrate and the stacking structure, and a channel structure which penetrates through the stacking structure and extends into the substrate, wherein the channel structure comprises a functional layer, a channel layer and an insulating layer, and a gap located in the insulating layer is formed in the end, which is close to the sacrificial layer, of the channel structure; removing the substrate; removing at least part of the sacrificial layer to expose a gap at the end part of the channel structure; and forming an insulating filling block in the gap. The insulating filling block is formed in the gap, so that the situation that when the semiconductor layer is formed subsequently, the material of the semiconductor layer enters the gap, electrical interference is caused, and consequently electrical failure of the device is caused is avoided, and the yield and reliability of the device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In recent years, the development of flash memory (Flash Memory) is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Has been widely used. In this context, in order to solve the difficulties encountered by planar flash memory and pursue lower production costs per unit storage unit, three-dimensional memory (3D NAND Flash) emerged as the times require. Alternately stacked multi-layer data storage units are formed in the three-dimensional memory, and the planar structure is transformed into a three-dimensional structure to improve the storage density and integration of the three-dimensional memory. Three-dimensional...

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Problems solved by technology

[0003] As the number of stacked layers of 3D memory increases, the process of forming 3D memory becomes more and more difficult, resulting in a decrease in the yield and reliability of 3D memory. Therefore, it is necessary to continuously optimize the process of forming 3D memory to continuously improve the yield of devices. rate and reliability

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