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IGBT junction-to-case thermal resistance measuring method based on large current saturation voltage drop

A measurement method and high-current technology, applied in the measurement of current/voltage, measurement device, measurement of electrical variables, etc., can solve the problems of high cost, large error, complex temperature measurement system structure, etc., to achieve a wide range of applications, protect integrity Effect

Active Publication Date: 2022-02-11
HUNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is also destructive to the IGBT module, and the error between the temperature detected by the thermal imager and the actual temperature is relatively large
At the same time, the temperature measurement system is complex in structure and expensive

Method used

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  • IGBT junction-to-case thermal resistance measuring method based on large current saturation voltage drop
  • IGBT junction-to-case thermal resistance measuring method based on large current saturation voltage drop
  • IGBT junction-to-case thermal resistance measuring method based on large current saturation voltage drop

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Embodiment Construction

[0038] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0039] The current conduction loop of the IGBT module is composed of four parts: the chip, the bonding wire, the chip solder layer and the copper layer on the DBC. The voltage drop at the end of the IGBT module is mainly composed of two parts, one part is the voltage drop V on the chip chip , the other part is the parasitic resistance voltage drop R of the IGBT module stray , while V chip In addition to being affected by the collector-emitter current I CE In addition to the impact, it is also affected by the chip junction temperature T j Impact. The conduction voltage drop expression of the IGBT module is shown in formula (1).

[0040] V CE =V chip +V stray =[V 0 -k 1 (T j -T j0 )]+[R 0 +R stray +k 2 (T j -T j0 )]×I CE (1)

[0041] V 0 is the internal PN junction voltage drop when the IGBT module is turned on, R ...

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Abstract

The invention discloses an IGBT junction-to-case thermal resistance measuring method based on large current saturation voltage drop. The method comprises the following steps that: (1) f (ICE) is measured by using an electric heating parameter testing system, wherein f (ICE) is expressed as f (ICE) = k2 * ICE-k1, wherein k1 is the temperature coefficient of V0 which is the internal PN junction voltage drop generated when a test IGBT module is switched on, k2 is a temperature coefficient of R0 which is equivalent ohmic resistance of a drift region and a conducting channel generated when the test IGBT is switched on, the ICE is an input current of the test IGBT module; and (2) based on the measured f (ICE), the steady-state junction-to-case thermal resistance value of the test IGBT module is measured by using a steady-state junction-to-case thermal resistance measuring system. The junction temperature of the IGBT module does not need to be measured, on one hand, the integrity of the IGBT module can be protected, on the other hand, a measuring circuit can be simplified, and errors caused by junction temperature measurement can be reduced; when the steady-state junction-to-case thermal resistance of the IGBT module is measured, the IGBT module does not need to be detached from the device, and the IGBT module is not damaged.

Description

technical field [0001] The invention relates to a method for measuring IGBT junction-case thermal resistance, in particular to a quasi-online measurement method for IGBT steady-state junction-case thermal resistance based on large current saturation voltage drop. Background technique [0002] As the most widely used representative of new power electronic devices, IGBT plays a vital role in related equipment such as photovoltaic inverters, wind energy converters, energy storage inverters, and flexible DC converter valves in the power grid. Therefore, it is of great significance to study the working performance and reliability of IGBT for the further reliable development of my country's power grid. The working performance and reliability of IGBT are directly related to its working junction temperature, and the thermal impedance of power electronic devices directly affects the junction temperature of the device. Therefore, accurate measurement of IGBT thermal resistance has imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/165G01R31/26
CPCG01R19/165G01R31/26
Inventor 肖标涂春鸣郭祺肖凡龙柳姜飞兰征
Owner HUNAN UNIV
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