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Multilayer metal capacitor structure and preparation method thereof

A capacitor structure and multi-layer metal technology, which is applied in capacitors, circuits, electrical components, etc., can solve problems such as inability to contact areas, increase production costs, and increase capacitance density, so as to save chip area, save production costs, and increase capacitance density. Effect

Pending Publication Date: 2022-02-15
江苏格瑞宝电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the capacitance density, a multi-layer capacitor structure is usually used, but in the current multi-layer capacitor structure, all the upper plates are connected with the same electrode, and all the lower plates are connected with the same electrode; Due to the connection via hole, the contact area cannot be blocked by the lower layer MIM capacitor; the upper plate of each layer needs to be formed by a photolithography process through an independent photolithography plate; therefore, although the existing multilayer metal capacitor structure greatly increases the capacitance density, it also brings come to other questions
Since the upper plate of each layer of capacitor needs a photolithography plate to be formed by photolithography process, and multi-layer requires multiple photolithography plates, which brings about the increase of production cost and the difficulty of popularization and application.

Method used

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  • Multilayer metal capacitor structure and preparation method thereof
  • Multilayer metal capacitor structure and preparation method thereof

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preparation example Construction

[0032] A kind of preparation method of multilayer metal capacitance structure of the present invention, comprises the steps:

[0033] (1), first deposit a metal layer, and photoetch to form the first layer of capacitor lower plate;

[0034] (2), deposit the first layer capacitor dielectric layer on the lower plate of the first layer capacitor, then deposit the metal layer, and then photoetch to form the upper plate of the first layer capacitor;

[0035] (3) Deposit an oxide layer on the bottom plate of the first layer capacitor and planarize and grind to form the first metal insulating layer;

[0036] (4) Carry out through-hole photolithography to the first layer of metal insulating layer, fill conductive material in the through-hole, and lead out the upper pole plate of the first layer capacitor and the lower pole plate of the first layer capacitor;

[0037] (5) Deposit a metal layer on the top of the first layer of metal insulating layer, and photolithographically form the ...

Embodiment 1

[0044] Such as figure 1 As shown, the multilayer metal capacitor structure in Embodiment 1 includes a first electrode 1, a second electrode 2, a first layer of capacitor lower plate 3, a first layer of capacitor dielectric layer 4, a first layer of capacitor upper plate 5, a first layer of capacitor upper plate 5, a first layer of capacitor The lower pole plate 6 of the two-layer capacitor, the first contact metal 7 , the second capacitor dielectric layer 8 , the upper pole plate 9 of the second capacitor and each metal insulating layer.

[0045] The first electrode 1 and the second electrode 2 are located on the top, and the first electrode 1 and the second electrode 2 are arranged in the same layer. The lower pole plate 3 of the first layer capacitor and the lower pole plate 6 of the second layer capacitor are all located below the two electrodes, and the lower pole plate 3 of the first layer capacitor and the lower pole plate 6 of the second layer capacitor are arranged at ...

Embodiment 2

[0058] Such as figure 2 As shown, the multilayer metal capacitor structure includes a first electrode 1, a second electrode 2, a first layer capacitor lower plate 3, a first layer capacitor dielectric layer 4, a first layer capacitor upper plate 5, a second layer capacitor lower plate Plate 6, first contact metal 7, second capacitor dielectric layer 8, second capacitor upper plate 9, third capacitor lower plate 10, second contact metal 11, third capacitor dielectric layer 12, third capacitor The upper plate 13 and each layer of metal insulation layer.

[0059] The first electrode 1 and the second electrode 2 are located on the top, and the first electrode 1 and the second electrode 2 are arranged in the same layer. The lower pole plate 3 of the first layer capacitor, the lower pole plate 6 of the second layer capacitor and the lower pole plate 10 of the third layer capacitor are all located below the two electrodes, and the lower pole plate 3 of the first layer capacitor and...

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Abstract

The invention discloses a multilayer metal capacitor structure and a preparation method thereof. Comprising two electrodes located at the top and arranged on the same layer, at least two layers of capacitor lower electrode plates arranged at intervals in the vertical direction, and capacitor dielectric layers and capacitor upper electrode plates which are sequentially stacked on the capacitor lower electrode plates from bottom to top. The capacitor upper pole plates of each layer are overlapped in the vertical direction, the capacitor upper pole plates of each layer and the capacitor lower pole plates of the adjacent layer are connected with one electrode, and the capacitor lower pole plates of each layer and the capacitor upper pole plates of the adjacent layer are connected with one electrode. According to the invention, the problem of high production cost of a multi-layer structure is effectively solved while high capacitance density is maintained.

Description

technical field [0001] The invention relates to a metal capacitor structure, in particular to a multilayer metal capacitor structure. Background technique [0002] In the current integrated circuit technology, the MIM metal capacitor structure has been widely used. In order to increase the capacitance density, a multi-layer capacitor structure is usually used, but in the current multi-layer capacitor structure, all the upper plates are connected with the same electrode, and all the lower plates are connected with the same electrode; Due to the connection via hole, the contact area cannot be blocked by the lower layer MIM capacitor; the upper plate of each layer needs to be formed by a photolithography process through an independent photolithography plate; therefore, although the existing multilayer metal capacitor structure greatly increases the capacitance density, it also brings Come other questions. Since the upper plate of each capacitor layer needs a photolithography ...

Claims

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Application Information

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IPC IPC(8): H01L23/64H01L49/02
CPCH01L23/642H01L28/60
Inventor 高学
Owner 江苏格瑞宝电子有限公司