Method for accurately acquiring photoetching parameters
A lithography parameter and accurate technology, applied in the direction of microlithography exposure equipment, optics, optomechanical equipment, etc., can solve the problems of unfavorable process stability, time-consuming, non-uniform screening standards, etc., to improve production efficiency and improve Stability, the effect of avoiding errors
Active Publication Date: 2022-02-18
CHANGXIN MEMORY TECH INC
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Problems solved by technology
The disadvantage of this method is that it takes a lot of time, usually 60-90 minutes; the screening criteria are often related to the experience of engineers and are greatly affected by human factors, which makes the screening criteria inconsistent and is not conducive to the stability of the process
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[0026] Embodiments of the method for accurately obtaining photolithography parameters provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0027] figure 1 It is a schematic diagram of the steps of an embodiment of the method for accurately obtaining lithographic parameters in the present invention. see figure 1 , the method for accurately obtaining photolithography parameters includes the following steps:
[0028] Step S10, using the same mask pattern as a mask, and performing photolithography on the target carrier under different preset photolithography parameters to obtain multiple target patterns.
[0029] The mask patterns are composed of the same type or different types of photolithography patterns. The type may refer to the density of the photolithography pattern, for example, dense pattern, semi-dense pattern and isolated pattern. The mask pattern may only consist of a single type of photolithography pa...
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The invention provides a method for accurately acquiring photoetching parameters, which comprises the following steps: photoetching a target carrier under different preset photoetching parameters by using the same mask pattern as a mask to obtain a plurality of target patterns; comparing the target graph with a standard graph to obtain an evaluation value, and if the evaluation value corresponding to the target graph is greater than or equal to a preset value, setting the target graph as an effective graph; drawing a Poisson curve by taking the line width of the effective pattern and the corresponding preset photoetching parameters as data; and obtaining photoetching parameters corresponding to a preset line width according to the Poisson curve. The invention has the advantages that the target graph is screened by using the standard graph, so that the screening process is standardized, errors caused by non-uniform manual screening standards are avoided, the influence of human factors on photoetching parameter selection is reduced, and the stability of a semiconductor manufacturing process is greatly improved; and meanwhile, manual operation is not needed, so that the production efficiency is greatly improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for accurately obtaining photolithography parameters in a photolithography process. Background technique [0002] In the mass production of chips, how to ensure the uniformity and stability of the line width of the feature size is of great significance to stabilize the product yield. In order to ensure a stable product yield, it is generally achieved by accurately determining the photolithography process window and exposure conditions. Among them, the photolithography process window refers to the range of exposure energy and focus value that can be used for production, and the exposure condition refers to the exposure energy and focus value set during production. [0003] At present, after obtaining raw data such as exposure energy and focus value, engineers need to manually screen the raw data, and manually draw curves based on the screened data to obtain exp...
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IPC IPC(8): G03F7/20
CPCG03F7/70491G03F7/20Y02P90/30
Inventor 严勋
Owner CHANGXIN MEMORY TECH INC