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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor structural strength of columnar storage capacitors

Pending Publication Date: 2022-02-22
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a semiconductor device and its forming method for the problem of poor structural strength of the columnar storage capacitor

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Embodiment Construction

[0051] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0052] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terminology used herein in the description of the present invention is only for the purpose of describing specific embodiments, and is not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0053] In...

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Abstract

The invention relates to a semiconductor device and a forming method thereof. The semiconductor device comprises: a substrate which comprises a unit region and a peripheral region; a first interlayer insulating layer and a second interlayer insulating layer which are formed on the substrate in the unit area and the peripheral area, wherein the first interlayer insulating layer and the second interlayer insulating layer are arranged at intervals in the direction perpendicular to the substrate; a columnar capacitor array comprising columnar capacitors which are arranged at intervals, wherein the columnar capacitors are formed in the first interlayer insulating layer and the second interlayer insulating layer of the unit area; and a contact structure formed in the first interlayer insulating layer and the second interlayer insulating layer of the peripheral region. According to the invention, the contact structure is arranged in the first interlayer insulating layer and the second interlayer insulating layer, so that the connection path of the contact structure can be effectively shortened, the space of the columnar capacitor array is effectively utilized, the arrangement density of each structure in the semiconductor device is improved, and the integration level of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the continuous development of mobile devices, battery-powered mobile devices such as mobile phones, tablet computers, and wearable devices are increasingly used in daily life. Memory is an indispensable component in mobile devices. Small size and integration put forward huge demands. [0003] Currently, dynamic random access memory (Dynamic Random Access Memory, DRAM) is widely used in mobile devices due to its fast transmission speed. However, as the size continues to shrink, the size of the columnar storage capacitor in the DRAM is also shrinking. Therefore, the current device structure and wiring density are low, which cannot meet the increasing integration requirements. Contents of the invention [0004] Based on this, it is necessary to provide a semiconductor device and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
CPCH10B12/30H10B12/03H10B12/09H10B12/50H10B12/00
Inventor 赵亮
Owner CHANGXIN MEMORY TECH INC
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