RC-IGBT structure for reducing reverse recovery loss of integrated diode

A technology of reverse recovery and diodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effect of reducing reverse recovery loss and reducing the peak value of reverse recovery current

Pending Publication Date: 2022-03-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The loss in the diode working mode is mainly the reverse recovery loss when it is turned off.

Method used

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  • RC-IGBT structure for reducing reverse recovery loss of integrated diode
  • RC-IGBT structure for reducing reverse recovery loss of integrated diode
  • RC-IGBT structure for reducing reverse recovery loss of integrated diode

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Embodiment Construction

[0015] The specific embodiments of the present invention are described below so that those skilled in the art can understand the present invention, but it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, as long as various changes Within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.

[0016] The present invention proposes an RC-IGBT structure that reduces the reverse recovery loss of an integrated diode, and its cellular structure includes a P-type collector region (1) and an N-type collector region (2), located in the collector region (1), (2) N-type buffer layer (3) and N-type drift region (4) above, carrier storage layer (5) and P-type base region (6), described P-type base region (6) is provided with ...

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Abstract

The invention discloses an RC-IGBT structure capable of reducing reverse recovery loss of an integrated diode, and the structure carries out the discrete design of a diode and a P + emitter region of an IGBT part on the basis of a conventional RC-IGBT structure. In the IGBT part, a conventional P + emitter region structure is reserved to ensure that the performance of the RC-IGBT is not damaged when the RC-IGBT works in an IGBT mode; in the diode part, the length of P + emitter regions is shortened, the P + emitter regions are arranged on the two sides of a dummy gate and are ensured to be in contact with an emitter metal electrode, the shortened P + emitter regions can reduce the injection efficiency of anode carriers of the integrated diode and reduce the number of carriers stored in an N drift region in the conduction of the diode, and finally the purpose of improving the reliability of the integrated diode is achieved on the premise that the performance of the IGBT is not damaged. And the reverse recovery current peak value and the reverse recovery loss of the integrated diode are reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an RC-IGBT structure for reducing the reverse recovery loss of an integrated diode. Background technique [0002] In order to reduce the size and production cost of power devices, scholars proposed to parasitic the reverse freewheeling diode inside the IGBT, thus developing the reverse conducting IGBT (Reverse Conducting-IGBT, RC-IGBT). RC-IGBT has been extensively studied at present, and it has complex trade-offs. To achieve IGBT characteristics (including IGBT turn-on voltage drop V CEsat and turn-off loss E off ) and internal parasitic diode characteristics (including diode turn-on voltage V F and diode reverse recovery loss E rr ) trade-off between. In the process of the freewheeling diode turning from conduction to blocking state, the diode cannot immediately enter the blocking state after reverse voltage is applied, but will temporarily maintain the conducting state and ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/08H01L29/739
CPCH01L29/7398H01L29/7397H01L29/0804
Inventor 伍伟李岩松陈勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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