Optical chip structure of high-power semiconductor laser, preparation method of optical chip structure and laser

Abstract

The invention provides an optical chip structure of a high-power semiconductor laser, a preparation method of the optical chip structure and the laser. The optical chip structure comprises a substrate, a buffer area, an optical function area and a ridge waveguide area. The buffer region is located on the substrate; the optical function area is positioned on the buffer area and is used for generating laser by stimulated radiation; the ridge waveguide region is located on the optical function region and used for controlling single-mode operation of the optical chip and guiding transmission of a laser beam in the optical chip. The optical chip structure further comprises an insertion spacer layer and an optical traction weight area. The insertion spacer layer is located between the optical function region and the ridge waveguide region and is used for controlling the width of the ridge waveguide when the optical chip operates in a single mode so as to improve the laser output power of the optical chip; and / or the optical traction weight area is positioned between the buffer area and the optical function area and is used for realizing traction on the optical field distribution of the optical function area so as to improve the laser output power of the optical chip. Therefore, ultrahigh laser output power of the III-V group ridge waveguide semiconductor laser optical chip can be realized.

Description

technical field [0001] The disclosure relates to technical fields such as optical sensing technology, optical network transmission technology, and semiconductor technology, and in particular to an optical chip structure of a high-power semiconductor laser, a preparation method thereof, and a laser. Background technique [0002] With the vigorous development of a new generation of optical sensing technology and optical integration technology, related technologies have been rapidly popularized and applied. In order to make the performance of existing optical sensing or optical integration products more excellent, improving the output power of optical chips of such products has become the focus of attention in the process of scientific and technological research and development, mainly because the laser output power of optical chips will directly affect related products. For example: (1) In a multi-channel grating fiber sensor system using the same light source, the laser outpu...

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Problems solved by technology

[0004] In order to solve at least one of the technical problems related to laser output power in traditional optical chips, the present disclosure provides a III-V group ridge waveguide semiconductor that can realize Optical chip structure of laser optical chip with ultra-high laser output power and its preparation method, laser

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