Optical chip structure of high-power semiconductor laser, preparation method of optical chip structure and laser

[0029] In order to make the objects, technical solutions, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0030] It should be noted that in the figures or instructions, unluckled or described implementations are all known to those skilled in the art, and the detailed description is not performed. Furthermore, the definition of each of the above components and methods is not limited to various specific structures, shapes, or methods mentioned in the embodiments, and those skilled in the art can simply change or replace them.

[0031] It will also be noted that the direction term mentioned in the examples, such as "upper", "lower", "front", "post", "left", "right", etc., is only the direction of the accompanying drawings, not It is used to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are indicated by the same or similar reference numerals. The conventional structure or configuration will be omitted when it may result in confusion of the understanding of the present disclosure.

[0032] The shape and size of each component in the figure does not reflect the true size and ratio, and only the contents of the disclosed embodiments are shown. Further, in the claims, any reference symbols located between parentheses should not be constructed to limit the claims.

[0033] Furthermore, the word "contain" does not exclude the components or steps present in the claims. The word "one" or "one" at the component does not exclude multiple such components.

[0034] The sequences used in the specification and the claims, such as "first", "second", "third", etc., to modify the corresponding elements, it does not mean that the element has any orders, nor Represents a sequence of a component or another component or in the order of manufacturing methods, and the use of these orders is only used to make a clear distinction between the elements having a naming.

[0035] Those skilled in the art will appreciate that the modules in the embodiments can be adaptively changed and disposed in one or more devices that are different from those embodiments. The modules or units in the embodiments can be combined into one module or unit or component, and can also divide them into multiple sub-modules or sub-units or sub-components. In addition to this feature and / or at least some of the units, any of the features disclosed in the present specification (including the appended claims, abstracts, and drawings) or any method of this specification or any method of this specification or such disclosure may be employed. All processes or units of the device are combined. Each of the features disclosed in this specification (including accompanying claims, abstracts, and drawings) can be replaced by replacement features that provide the same, equivalent or similar purpose. Further, in the unit claim, several devices can be enumerated, and several of these devices may be embodied in the same hardware item.

[0036]Similarly, it should be understood that in order to reduce the disclosure and help understand one or more of the various disclosure, each of the features of the present disclosure will sometimes be grouped into a single embodiment together. Or in the description thereof. However, the disclosure should not be interpreted as reflected in the following description: The present disclosure as claimed is required to be more features than those specifically described in each of the claims. More specifically, as reflected in the appended claims, the disclosure is less than all features of a single embodiment disclosed above. Therefore, the claims of the claims are clearly incorporated herein by reference.

[0037] In order to solve at least one of the technical problems involved in the exotic power in the conventional optical chip structure, the present disclosure provides a use of the III-V ridge waveguide semiconductor laser chip ultra-high optical power output can be applied to light sensing and light integration. Many high-power semiconductor laser light chip structures and preparation methods, lasers.

[0038] Such as Figure 1 - Figure 6 As shown, one aspect of the present disclosure provides an optical chip structure of a high power semiconductor laser, such as figure 1 As shown, a substrate 7, a buffer 8, a light function zone 9, and a ridge waveguide 6 are included.

[0039] The buffer 8 is located on the substrate 7;

[0040] The optical functional region 9 is located on the buffer 8 for attachment of radiation to generate lasers;

[0041] The ridge waveguide 6 is located on the optical function zone 9, and the transmission of the optical chip is operated and the transmission of the laser beam in the optical chip is directed.

[0042] Among them, the optical chip structure also includes an insertion spacer layer 5 and a light traction scale zone 1.

[0043] The insertion spacer layer 5 is located between the optical function zone 9 and the ridge waveguide 6 for controlling the width of the ridge waveguide when the optical chip is operated in a single mode to improve the laser output power of the optical chip; and / or

[0044] The optical traction scale zone 1 is located between the buffer 8 and the optical function zone 9 for traction to the light field distribution of the optical function zone to improve the laser output power of the optical chip.

[0045] The substrate 7 is a main body support structure of the optical chip structure, and the buffer zone 8 is formed on the surface of the substrate 7 as the bonding layer, and the buffer zone 8 is mainly used as a connecting layer between the substrate 7 and the optical function region 9. It is made to create a good environment for crystal growth according to the optical chip structure on the substrate 7, so that the optical functional region 9 can be more securely formed in the crystal growth layer structure of the optical chip structure.

[0046] The optical functional region 9 serves as the main light-emitting zone structure of the optical chip structure, which generates photons after being activated, forming laser radiation, and avoids light energy loss as much as possible to achieve the light function of the optical chip.

[0047] The ridge waveguide 6 serves as an optical output control structure of the optical chip structure for controlling the single mode operation of the optical chip, and can guide the transmission of the laser beam of the optical chip structure in the optical chip.

[0048] The insertion spacer 5 mainly implements the ridge waveguide width of the single mode operation of the ridge waveguide region 6, and the optical traction scale zone 1 mainly achieves regulatory traction of the light field distribution of the optical function zone 9 to achieve light. The laser output power of the chip is further improved.

[0049] The insertion spacer 5 and the optical traction scale zone 1 may be formed different from different positions of the optical chip structure to further avoid the light energy loss of the optical function zone 9, thereby realizing the optical chip laser output power than the prior art optical chip structure. Lifting. Wherein, the insertion spacer layer 5 and the light traction scale zone 1 may be formed separately in the corresponding position of the optical chip structure, or may be formed simultaneously in the optical chip structure, i.e., the insertion spacer layer 5 and the light traction scale zone 1 can be introduced, also It can be introduced simultaneously into the crystal growth layer structure of any conventional III-V single-mode ridge waveguide semiconductor laser optical chip to obtain extremely high optical chip laser output power.

[0050] Therefore, by the above figure 1 The light chip structure shown can construct a laser optical chip crystal growth structure layer applied to a wide range of fields such as light sensing and light integration, and can achieve a ridge waveguide region by means of a structural arrangement of the insertion spacer 5 and the light traction scale zone 1. 6 The single mode operation of the ridge waveguide width and the traction of the light field distribution of the light function zone, improve the laser output power of the optical chip.

[0051] Such as Figure 1 - Figure 6 As shown, according to the embodiment of the present disclosure, the preparation material of the substrate 7, the buffer zone 8, and the optical traction scale zone 1 is an N-type doped material; the preparation material of the insertion spacer layer 5 and the ridge waveguide 6 is a p-type doped material. . Further, the preparation material of the optical function zone 9 is generally an intrinsic material. Among them, the substrate 7, the buffer zone 8, and the optical traction scale zone 1 may constitute an n-type doped region, the insertion spacer layer 5 and the ridge waveguide 6 may constitute a p-type doped region, and the optical functional region may constitute the residential area.

[0052] Wherein, the buffer 8 is directly above the substrate 7, and the buffer zone 8 is a first layer of material grown by crystal growth on the substrate 7, which is used to create a good to facilitate crystal growth according to the optical chip structure design. The environment makes the optical chip structure more stable.

[0053] Therefore, the optical traction scale zone 1 can be used to transist the light field distribution in the vertical direction of the crystal growth layer to the n-type doped region below the light function region 9, since the N-type doped region is more than the P-type region. It has a lower free carrier absorption loss, and thus can greatly reduce the internal absorption loss of the optical chip, thereby greatly increase the laser output power of the optical chip. Further, the insertion spacer 5 can be used to introduce a dimension of the width of the ridge waveguide region 6 can be controlled by controlling the single mode of the optical chip, by controlling the thickness of the insertion spacer 5 to control the width of the ridge waveguide in the single mode of the optical chip, thereby controlling Laser output power of the optical chip.

[0054] Such as Figure 1 - Figure 6 As shown, according to the embodiment of the present disclosure, the refractive index of the buffer 8 is smaller than the refractive index of the optical functional region 9 and the light traction scale zone 1 of the optical chip structure.

[0055] Buffer 8 typically uses materials with low refractive index in the optical chip growth layer material system, such as Al x GA 1- x GaAs material in the AS / GaAs material system as a preparation material. Therefore, the refractive index of the buffer 8 is smaller than the refractive index of the optical cell structure of the optical chip structure, and the refractive index of the general buffer zone 8 can and the insertion spacer layer 5 and the ridge waveguide 6 are comparable, It is conducive to ensuring that the buffer 8 has an impact on the light field distribution of the optical function zone 9.

[0056] Such as Figure 1 - Figure 6 As shown, according to the embodiment of the present disclosure, the optical functional region 9 further includes a barrier layer 2, a quantum active region 3, and a light band region 4.

[0057] The barrier layer 2 is located on the optical traction scale region 1, and the carrier flow of the quantum active region 3 of the light function zone 9 is overflowed, and the light energy loss of the optical functional region 9 is prevented.

[0058] The quantum active region 3 is located on the barrier layer 2 for electrical radiation to generate lasers;

[0059] The light band region 4 is located on the quantum active region for shaped the light radiation of the optical function zone.

[0060] Such as Figure 1 - Figure 6 As shown, according to the embodiment of the present disclosure, the quantum active region 3 includes a quantum well structure, a quantum line structure, or a quantum dot structure.

[0061] The barrier layer 2 is typically located between the buffer 8 and the quantum active region 3 for blocking the overflow of the inner carrier in the quantum active region 3, and the radiation energy generated in the carrier is as bonded to the quantum as much as possible There is a source area 3 and its adjacent regions;

[0062] The quantum well active region 3 is generally an active region composed of a single or plurality of quantum wells, quantum lines, or quantum dot structures, free carrier electrons and holes in the quantum active region 3, and generate photons. A laser is generated by a state of excited.

[0063] The light band region 4 generally consists of a crystal growth layer of at least one or more layers of material, or may be composed of a continuous countless layer crystal growth layer, for example, a multi-layer AlgaAs layer that matches the lattice, the light bound region 4 Located below the quantum active region 3 and the ridge waveguide 6, the light refractive index is subjected to a layer-by-layer manner from the quantum active region 3 to the ridge waveguide 6 to ensure that the laser radiation generated by the quantum active region 3 is exhausted. May be more bonded in the quantum active region 3 and its adjacent area, figure 2 and image 3 Indicated. Wherein, the light band region 4 may have at least one layer of binding layers, each of which is typically by Al. x GA 1-x The AS material is formed, and the refractive index of each of the beam tie layers in the vertical direction of the transistor growth layer of the quantum active region 3 to the ridge waveguide portion 6 in the light band region 4 is reduced. Therefore, the light band region 4 can be a separate multi-layer Al by a refractive index. x GA 1-x AS material composition, each layer Al x GA 1-x The X of the beam-bound layer of the AS material is different, figure 2 and image 3 As shown, it is also possible to pass continuously change Al x GA l-x The form of X components in the AS is made from countless layers Al x GA 1-x AS material composition, specific Figure 4 - Figure 6 As shown, i.e., the refractive index of the light bound zone 4 is linearly decreased in the vertical direction of the growth layer, and the laminated layer corresponding to the countless layer light beam layer is constituting the light bound region 4, and the light beam layer is close to the side of the ridge waveguide region. The refractive index is smaller than the refractive index of the light beam layer on the side of the adjacent quantum active region 3.

[0064] It should be noted that the optical traction scale zone 1 general thickness can be any thickness. However, since the introduction of the optical traction scale zone 1, the center of gravity distribution in the vertical direction of the crystal growth is pulled into the n-type doped region, reducing the light of the quantum well (or quantum / quantum point) active region 3. Strong distribution and light buckling factors, thereby reducing the quantum efficiency of the optical chip. Therefore, the thickness of the light traction scale region 1 cannot be thickened without limitation, and it is necessary to ensure that the light bound factor associated with the light intensity distribution of the quantum active region 3 is greater than 3%. Further, since the optical traction scale zone 1 is introduced, the thickness of the crystal growth layer is increased in the vertical direction, and there may be a case where the vertical direction is dual mode, resulting in the optical chip to operate in a single mode. To avoid the occurrence of this problem, the thickness of the light traction scale zone 1 cannot be thickened without limitation, and it is necessary to ensure a single mode operating state in the direction of the crystal growth layer.

[0065] Further, the thickness of the insertion spacer 5 can be any thickness. However, when the insertion spacer 5 is introduced, it will reduce the difference between the ridge waveguide regions 6 to produce the difference between the effects of effective refractive index, the thicker insertion spacer layer 5, the smaller the difference, the ridge waveguide 6 pair The control capability of the transmission will be reduced accordingly. In order to ensure the control of the ridge waveguide region 6 on the conductive direction of the base mode, the thickness of the insertion spacer 5 cannot be increased without limitation to increase the output optical power of the chip. To this end, the typical value of the thickness of the insertion spacer 5 can generally be controlled between 0.01-1.5 micrometers to ensure that the effective refractive index difference between the base mode is greater than 0.35% before and after the ridge waveguide region 6.

[0066] In the embodiment of the present disclosure, the structural layer design of the optical traction scale zone 1 can be designed in a single layer (eg figure 2 and Figure 4 The shown) may also be a multi-layer design (such as image 3 , Figure 5 and Image 6Indicated. The structural layer design of the light banding region 4 can also be a single layer design, that is, the refractive index in the light band region 4 is not changed (not shown herein), or multi-layer design ( Figure 2 - Figure 6 Indicated. The multi-layer design can be a discrete multi-layer Al by a refractive index from the light function to the insertion spacer crystal growth direction. x GA 1-x AS material composition, each layer Al x GA 1-x The X of the beam-bound layer of the AS material is different, figure 2 and image 3 As shown, it is also possible to pass continuously change Al x GA 1-x The form of X components in the AS is made from countless layers Al x GA 1-x AS material composition, specific Figure 4 - Figure 6 Indicated. Among them, the barrier layer 2, the insertion spacer layer 5, and the ridge waveguide 6 are generally a single layer structure, and the quantum active region 3 may be a composite layer structure having a plurality of quantum well layers, quantum dot layers, or quantum line layers. Figure 2 - Figure 6 Indicated.

[0067] Such as figure 2 , Figure 4 As shown, the structural layer design of the optical traction scale zone 1 can be a single layer design, that is, the refractive index in the optical traction scale zone 1 is not changed. Among them, for multi-layer design light traction scale zone 1, if there is no difference in the refractive index of each layer, it will be substantially the same, and it will be equivalent to figure 2 , Figure 4 The structural design shown.

[0068] Such as image 3 and Figure 5 As shown, according to the embodiment of the present disclosure, the optical traction scale zone 1 includes a plurality of light traction layers, and the plurality of light traction layers are arranged in sequence between the barrier layers 2 of the buffer zone 8 and the light function zone 9; In the two optical traction layers adjacent, the refractive index of the light traction layer close to the buffer zone 8 is smaller than the refractive index of the light inlet layer adjacent the barrier layer 2.

[0069] Such as image 3 and Figure 5 As shown, the optical traction scale zone 1 can include a 4-layer light traction layer, the thickness of the intermediate two-layer light traction layer is small, and the thickness is substantially consistent, and the refractive index of each layer is increased vertically toward the crystal growth layer; 8 phases 8 The thickness of the optical traction layer in contact is comparable to the thickness of the light traction layer in contact with the barrier layer 2, and is larger than the thickness of the intermediate two-layer optical traction layer, the refractive index of the optical traction layer in contact with the buffer 8 in the light traction scale zone 1 The smallest, the refractive index of the light traction layer in contact with the barrier layer 2 is the largest in the light traction scale zone 1. In this way, the light field distribution of the optical chip structure emitted by the quantum active region 3 can be achieved by the hierarchical structure, and the stable traction of the distribution of the light field is achieved, and the light energy loss is further prevented. Among them, the thickness of the optical traction layer in contact with the barrier layer 2 is the largest, thereby realizing the N-doped region of the light field distribution in the vertical direction to the N-doped region below the quantum active region 3, which can greatly reduce the internal absorption loss of the optical chip. Thus, greatly increase the laser output power of the optical chip.

[0070] Such as Image 6 As shown, according to the embodiment of the present disclosure, the refractive index of the optical traction scale zone 1 is raised in the direction of the buffer zone 8 to the barrier layer 2.

[0071] Such as Image 6 As shown, the structural layer of the optical traction scale zone 1 can be understood as being configured as a few layers of light traction layers, and the refractive index between each adjacent light halving layer has a fixed refractive index, thereby making light traction. The refractive index in the scale zone 1 appears from a linear increment in the vertical direction of the crystal growth layer. Specifically, the refractive index linear variation of the light traction scale zone 1 can be achieved by real-time components of the preparative method during the preparation process.

[0072] Therefore, the optical traction scale zone 1 can achieve progressive traction of the light field distribution of the optical chip structure emitted by the quantum active region 3 by the refractive index linear variation structure, and achieves stable traction of the distribution of the light field, further reduction of P doping Light loss caused by zone carrier absorption.

[0073] Such as figure 2 and image 3 As shown, according to the embodiment of the present disclosure, the light strap region 4 includes a plurality of light band layers, and the plurality of light band layers are arranged in sequence between quantum active region 3 and the insertion spacer layer 5; wherein in adjacent In the two light beam layers, the refractive index of the light band layer near the quantum active region 3 is greater than the refractive index of the light band layer adjacent the insertion spacer layer.

[0074] Such as image 3 and Figure 5 As shown, the light band region 4 can include a 4-layer light bound layer, and each layer is relatively, and the refractive index of each layer is reduced to the vertical direction of the crystal growth layer. Among them, the refractive index of the beam layer in contact with the quantum active region 3 is the largest in the light band region 4, and the refractive index of the light band layer inserted inserted into the interjunction layer 5 is minimized in the light band region 4. Thus, the light energy emitted by the quantum active region 3 can be achieved by hierarchical structure, thereby achieving further preventing light energy loss.

[0075] Such as Figure 4 - Figure 6 As shown, according to the embodiment of the present disclosure, the refractive index of the light bandage zone 4 is linearly decreased in the direction from the quantum active region 3 to the insertion spacer 5.

[0076] Such as Image 6 As shown, the structural layer of the light banding region 4 can be understood as being configured as a few layers of light band layers, and the refractive index between each adjacent light beam layer has a fixed refractive index of weak difference, thereby enabling the light bound region. The refractive index in the 4 appears from the linear decrement in the vertical direction of the crystal growth layer. Specifically, the refractive index linear variation of the light bound region 4 can be achieved by the component of the preparative material by real-time adjustment of the composition in the preparation process.

[0077] Therefore, the light band region 4 can achieve the exciting radiation to the quantum active region 3 by the refractive index linear variation structure, and further prevent light energy loss in the quantum active region 3 and its adjacent region.

[0078] Such as Figure 2 - Figure 6 As shown, according to the embodiment of the present disclosure, the optical chip structure further includes an etch barrier layer 10, and the etch barrier layer 10 is located between the insertion spacer layer 5 and the ridge waveguide 6, wherein the etch barrier layer 10 can be performed. Selective corrosion is achieved when the ridge wave is moisture, so the etch barrier layer 10 can be used to control the thickness of the ridge waveguide region 6 during the formation of the ridge waveguide region 6.

[0079] Wherein, the refractive index of the etch barrier layer 10 can be greater than the insertion spacer layer 5 and the refractive index of the ridge waveguide 6.

[0080] Accordingly, the present disclosure provides an optical chip structure that enables the III-V ridge waveguide semiconductor laser optical chip ultra high laser output power, which can be applied to a wide range of applications such as light sensing and optical integration. Such as Figure 1 - Figure 6 As shown, between the insertion spacer 5 is introduced between the light band region 4 located below the ridge waveguide 6 and the quantum active region 3, the insertion spacer layer 5 can adopt a low refractive index in the optical chip design material system. Crystal growth layer material, for example in Al x GA 1- x GaAs material in the AS / GaAs system. The introduction of the insertion spacer 5 is introduced into a single-mode ridge waveguide width design that controls the dimension of the single mode operation of the optical chip, by controlling the thickness of the insertion spacer layer 5 to control the ridge waveguide of the chip single mode operation. The width is controlled to control the laser output power. Further, it is also possible to introduce a light traction scale zone 1 between the N-type doped regions, the N-type doped region below the barrier layer 2 below the quantum active region 3, and the optical traction scale zone 1 is introduced, and the optical drawing scale zone 1 is designed by the chip design material. High refractive index single layer or multilayer crystal growth layer material in the system, for example in Al x GA 1-x AL in the AS / GaAs system x GA 1-x AS material. The light traction scale zone 1 is intended to transmit the light field distribution in the vertical direction of the crystal growth layer to the N-doped region below the quantum active region 3, which has lower freedom than the P doped region. The carrier absorption loss can greatly reduce the internal absorption loss of the optical chip structure, thereby greatly increase the laser output power of the optical chip.

[0081] In the examples of the present disclosure, in general, the laser power output of the single-mode ridge waveguide semiconductor laser is proportional to the width of the ridge waveguide. Since the introduction of the insertion spacer layer 5 can introduce a dimension of the ridge waveguide width that controls the single mode of the optical chip, and by controlling the thickness of the insertion spacer 5 can control the width of the ridge waveguide when the optical chip is operated, the width of the optical chip is operated, so it is optimized, It is best to best select the width of the ridge waveguide 6 of the single-mode ridge waveguide chip, thereby effectively increase the laser output power of the optical chip. The thickness of the insertion spacer 5 can be any thickness. However, when the insertion spacer 5 is introduced, it will reduce the change in the effective refractive index difference between the base mode before and after the ridge waveguide, the thicker the insertion spacer layer 5, the smaller the difference, the control capability of the ridge waveguide It will be reduced accordingly. In order to ensure the control of the ridge waveguide to the base mode light energy transmission direction, the thickness of the insertion spacer 5 cannot be increased without limitation to increase the laser output power of the optical chip. A typical value of the thickness of the insertion spacer 5 is generally controlled between 0.01-1.5 microns to ensure that the effective refractive index difference between the base mode before and after the ridge waveguide is greater than 0.35%.

[0082] In the embodiment of the present disclosure, the internal loss of the semiconductor laser is mainly composed of several portions: the free carrier absorption of the light banding area, can be absorbed, and the carrier absorption and waveguide in the quantum active region region. Surface scatter absorption, etc. All types of semiconductor lasers have the above internal loss problems, and internal loss will greatly affect the operating characteristics of the laser device, such as increasing the laser threshold and reduce the oblique efficiency of the laser.

[0083] Among them, the internal loss of the semiconductor laser can be divided into two major categories, one type is closely related to the injection carrier concentration N, such as the free carrier absorption of the light bound zone; the other is independent of the concentration of the injection carrier, such as a waveguide Surface scatter absorption. Therefore, the total internal loss coefficient of the semiconductor laser is:

[0084] alpha int = Α 0 + σ im · N (1)

[0085] Among them, the first α 0 Is a constant, σ int It is an effective cross section related to all absorption loss processes.

[0086] Since the optical traction scale zone 1 can transmit the light field distribution of the vertical direction of the optical chip structure to the n-type doped region below the quantum active region 3, the N-type doped region has more than the p-doped region. Low free carrier absorption loss. That is, a valid cross-sectional σ of the p-type doped region can be greatly reduced. int Therefore, it is possible to greatly reduce the internal absorption loss of the optical chip, and greatly increase the laser power output of the optical chip. In general, the thickness of the light traction scale zone 1 can be any thickness. However, since the introduction of the optical traction scale zone 1, the center of gravity distribution of the light intensity in the vertical direction of the crystal is pulled to the N-type doped region, and the light intensity distribution and light strap of the quantum active region 3 will reduce the light. The quantum efficiency of the chip, so, the thickness of the light traction scale zone 1 cannot be thickened without restriction, and it is necessary to ensure that the light bound factor of the light intensity distribution of the quantum active region 3 is greater than 3%. Further, since the introduction of the optical traction scale zone 1, the thickness of the crystal growth layer is increased in the vertical direction, and there may be a case where the vertical direction is dual mode, resulting in the optical chip structure to operate in a single mode. To avoid the occurrence of this problem, the thickness of the light traction scale zone 1 cannot be thickened without limitation, and it is necessary to ensure a single mode operating state in the direction of the crystal growth layer.

[0087]In general, the power output of single-mode ridge waveguide semiconductor lasers is proportional to the width of the ridge waveguide. Since the introduction of the insertion spacer layer 5 can introduce a dimension of the ridge waveguide width that controls the single mode of the optical chip, and by controlling the thickness of the insertion spacer 5 can control the width of the ridge waveguide when the optical chip is operated, the width of the optical chip is operated, so it is optimized, It is best to best select the ridge waveguide width of the single-mode ridge waveguide chip, thereby effectively increase the laser output power of the optical chip. The thickness of the insertion spacer may be any thickness, but after introducing the insertion spacer layer 5, the change in the effective refractive index difference between the base mode before and after the ridge waveguide is reduced, the thicker the insertion spacer 5, the more Small, the control capability of the ridge waveguide to the base mode is reduced accordingly. In order to ensure the control of the ridge waveguide to the base mode light energy transmission direction, the thickness of the insertion spacer 5 cannot be increased in order to increase the output laser power of the optical chip. The typical value of this thickness is generally controlled between 0.01-1.5 micrometers to ensure that the effective refractive index difference between the base mode before and after the production of ridge waveguides is greater than 0.35%.

[0088] Such as figure 1 and Figure 7 As shown, another aspect of the present disclosure also provides a method of preparing an optical chip structure of a high power semiconductor laser applied to a wide range of applications such as light sensing and optical integration, including steps S1-S4.

[0089] In step S1, a substrate 7 is formed,

[0090] In step S2, a buffer 8 is formed on the substrate 7;

[0091] In step S3, an optical functional region 9 is formed on the buffer 8, and the optical function zone 9 is used to cause laser;

[0092] In step S4, a ridge waveguide zone 6 is formed on the optical function zone 9, and the ridge waveguide 6 is used to control the single mode operation of the optical chip and guide the transmission of the laser beam in the optical chip.

[0093] The method also includes steps S5 and / or S6.

[0094] In step S5, before forming the ridge waveguide region 6, the insertion spacer layer 5 is formed on the light function zone 9, and the insertion spacer layer 5 is used to control the width of the optical chip in the single mode running the ridge waveguide to improve the laser light of the optical chip. Output Power;

[0095] In step S6, before forming the optical function zone 9, a light traction scale zone 1 is formed on the buffer zone 8, and the optical traction scale zone 1 is used to achieve traction of the light field distribution of the optical function zone 9 to improve the laser light of the optical chip. Output Power.

[0096] It can be seen that by the preparation method of the optical chip structure, the preparation of the optical chip structure can be achieved by a simple process, and the process conditions of the entire preparation are simple, and the process conditions are easy to achieve, the cost is low, which is advantageous for efficient preparation of the above optical chip structure. .

[0097] Yet another aspect of the present disclosure also provides a laser, wherein the above-described optical chip structure can be applied to a high power semiconductor laser, which can be applied to many fields such as light sensing and optical integration.

[0098] Based on the optical chip structure of the present disclosure embodiment, the insertion interval layer and the optical draw balance region may be seen that it can be introduced separately, and can also be introduced simultaneously into any common III-V single-mode ridge waveguide semiconductor laser optical chip structure crystal. The growth layer is designed to obtain a highly high optical chip laser output power. The optical chip structure is generally suitable for optimal design of various III-V semiconductor laser optical chip growth layer, typical optical chip types include: distributed Prague reflection (DBR) semiconductor tunable laser chip, distributed feedback (DFB) ) Semiconductor laser chip, Fabry - Peror (FP) laser chip, optical amplifier (SOA) chip, and ultra-radiation light emitting diode (SLED) chip.

[0099] Therefore, there is a wide range of laser devices such as light sensing and optical integration of light-sensing and optical integration, with extremely high scientific research value and commercial utilization value according to the optical chip structure of the present disclosure.

[0100] Here, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings.

[0101] The embodiments described above are described in further detail purposes of the present invention, and it is understood that only the specific embodiments of the present invention are not intended to limit the invention. Any modification, equivalent replacement, improvement, etc. of the present invention should be included in the scope of the invention.