Rectangular laser generating device for high-power dual-wavelength semi-conductor

Abstract

The invention discloses a rectangular laser generating device for a high-power dual-wavelength semi-conductor, which comprises an A stack (1), an A shaping lens (11), a B stack (2), a B shaping lens (21), a coupling mirror (3), a shaping lens (4), a reflection focusing mirror (5), an air inlet (6), an optical shutter (7), and a shielding box (8). According to the invention, the coupling mirror isadopted to stack two laser beams so as to improve the output power of the laser; the shielding box is used for insulating the internal environment and the external environment; the positive pressure air is input from the air inlet to prevent the external dust from invasion and the devices in the box is subjected to air cooling; the counter back pass of the external diffused photo thermal can be cut off by the action of the optical shutter diaphragm; the reflection focusing mirror is used for absorbing the photo thermal passing backing along the optical path in a counter manner, and the photo thermal is subjected to cooling; and through the coupling stacking, sealing isolating, diaphragm countersealing, reflection heat absorption and positive pressure air cooling, the output power of the semi-conductor laser generator is improved, so the purposes of dust encroachment separation, and back pass and per se photo-thermal damage prevention are achieved.

Description

technical field [0001] The invention relates to a semiconductor laser generator, specifically a high-power dual-wavelength semiconductor rectangular laser generator that couples and superimposes two beams of power semiconductor lasers of different wavelengths to form a beam of high-power dual-wavelength laser for industrial laser processing. device. Background technique [0002] Power semiconductor lasers generate laser beams by accumulating energy in the form of stacks, and obtain single-wavelength power laser beams by shaping and focusing the laser beams through lenses. Semiconductor lasers have the characteristics of small size and light weight; the existing technology is used in industrial lasers The high-power laser for processing is usually provided by a large and heavy high-power gas laser. This is because the semiconductor laser is limited by the power of the semiconductor laser chip, and the output power of the semiconductor laser is difficult to further increase; i...

AI Technical Summary

Problems solved by technology

[0002] Power semiconductor lasers generate laser beams by accumulating energy in the form of stacks, and obtain single-wavelength power laser beams by shaping and focusing the laser beams through lenses. Semiconductor lasers have the characteristics of small size and light weight; the existing technology is used in industrial lasers The high-power laser for processing is usually provided by a large and heavy high-power gas laser. This is because the semiconductor laser is limited by the power of the semiconductor laser chip, and the output power of the semiconductor laser is difficult to further increase; in addition, the existing technology is used in industry. Power semiconductor lasers processed by lasers often damage the laser itself and the mirror group due to the high temperature of light and heat return and the dust attached to the surface of the mirror group absorbing the laser energy and generating high heat. Problems and Deficiencies of Heat Return and Dirt Harm

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