Laterally diffused metal-oxide semiconductor transistor and method of forming same

Abstract

A transistor includes a trench formed in a semiconductor substrate. A conductive spacer is formed in the trench and offset from a first sidewall of the trench. A dielectric material is formed in the trench and surrounds the conductive spacer. A drift region is formed in the semiconductor substrate adjacent to the first sidewall and a first portion of a second sidewall of the trench. A drain region is formed in the drift region adjacent to a second portion of the second sidewall. A first gate region overlaps a portion of the drift region and is separated from the conductive spacer.

Description

technical field [0001] The present disclosure relates generally to semiconductor devices, and more particularly, to laterally diffused metal-oxide semiconductor (LDMOS) transistors and methods of forming the same. Background technique [0002] Conventional semiconductor devices and semiconductor device manufacturing processes are well known. For example, metal-oxide-semiconductor field-effect transistors (MOSFETs) are commonly used in a variety of different applications and electronics—from sewing machines to washing machines, automobiles to cell phones, and more. As process technology advances, these semiconductor devices are expected to increase performance while reducing size and cost. However, there are challenges in balancing size, cost, performance, and long-term reliability. Contents of the invention [0003] In general, a transistor is provided, comprising: a trench formed in a semiconductor substrate; a conductive spacer formed in the trench, the conductive spac...

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However, there are challenges in balancing size, cost, performance, and long-term reliability

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