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Light emitting diode and light emitting device

A technology of light-emitting diodes and light-emitting layers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of LED chip performance degradation, current congestion, damage, etc., and achieve the effects of avoiding burns, widening the width, and increasing the injection area.

Active Publication Date: 2022-03-29
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current LED chip tends to gather a higher concentration of carriers at the place where the metal electrode (pad) connects to the finger electrode (finger), causing current congestion, especially during the long-term aging process, there is a risk of burns at the current congestion. Eventually, the performance of the LED chip will be reduced or even damaged.

Method used

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  • Light emitting diode and light emitting device
  • Light emitting diode and light emitting device
  • Light emitting diode and light emitting device

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Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of the embodiments of the present invention, rather than all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined as long as they do not constitute conflicts; based on the embodiments of the present invention, the present invention All other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0042]In describing the present invention, it should be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horiz...

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Abstract

The invention provides a light-emitting diode which comprises an epitaxial structure, a first electrode and a second electrode, the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence, the first electrode is located on the epitaxial structure and electrically connected with the first semiconductor layer, and the second electrode is located on the epitaxial structure and electrically connected with the second semiconductor layer. The second electrode comprises a starting part and an extending part connected to the starting part, the extending part is provided with an arc-shaped part, the arc-shaped part is provided with a first arc-shaped edge and a second arc-shaped edge when being overlooked from the upper portion of the light-emitting diode to the epitaxial structure, and the first curvature radius of the first arc-shaped edge is smaller than the second curvature radius of the second arc-shaped edge; the first arc-shaped edge and the second arc-shaped edge face the same direction, and the distance between the circle center of the first arc-shaped edge and the circle center of the second arc-shaped edge is smaller than or equal to 5 micrometers. Therefore, the width of the arc-shaped part at the corner can be widened, the current congestion condition of the arc-shaped area is improved, the injection area of current carriers is increased, and burn at the corner is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and a light emitting device. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor light-emitting element, usually made of semiconductors such as GaN, GaAs, GaP, GaAsP, etc. Its core is a PN junction with light-emitting characteristics. The region is injected into the P region, holes are injected from the P region into the N region, and a part of the minority carriers entering the opposite region recombine with the majority carriers to emit light. Light-emitting diodes have the advantages of high luminous intensity, high efficiency, small size, and long service life, and are considered to be one of the most promising light sources at present. In recent years, LEDs have been widely used in daily life, such as lighting, signal display, backlight, car lights, and large-screen displays. At the same time, thes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38
CPCH01L33/38H01L2933/0016H01L33/20H01L33/42H01L33/44H01L33/382H01L33/387H01L33/24H01L33/46
Inventor 曹林华陈婉君王绘凝唐荷映贺春兰江莉莉张丽明杨人龙张中英
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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