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A d-band siw Leroy coupling structure and its design method

A technology of coupling structure and design method, applied in the microwave field, can solve the problems of insufficient high selectivity and complex SIW coupling structure

Active Publication Date: 2022-07-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above existing problems or deficiencies, in order to solve the problems of the existing SIW coupling structure being relatively complex and relatively insufficient in high selectivity, the present invention provides a D-band SIW Leloux coupling structure and its design method

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  • A d-band siw Leroy coupling structure and its design method
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  • A d-band siw Leroy coupling structure and its design method

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Embodiment Construction

[0032] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0033] A design of a D-band SIW Leroy coupling structure includes the following steps:

[0034] Step 1. Design a SIW transmission line for D-band transmission. Determine the dielectric constant of the dielectric substrate ε = 2.1, the cavity width E = 1.59 ~ 1.63mm, the length of the SIW transmission line is 3mm, the diameter of the metal through hole d = 0.2 ~ 0.3mm, the hole center between two adjacent metal through holes The distance p=0.24~0.26mm, the thickness of the dielectric substrate t=0.2~0.25mm, and the thickness of the copper clad laminate t1=0.02mm. In this embodiment, d=0.2mm, E=1.59mm, p=0.24mm, and t=0.25mm.

[0035] Step 2, constructing a Leroy ring structure on the common metal layer of the double-layer SIW.

[0036] First, determine whether the designed Leroy ring structure is a single ring or a double ring, and if the sing...

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Abstract

The invention relates to microwave technology, in particular to a D-band SIW Leroy coupling structure. For the common metal layer of the double-layer SIW transmission line, the present invention adopts the structure of constructing single and double Leroy rings, and cooperates with the loading methods of three kinds of gaps W to form a total of three structures 1, 2, and 3 to realize coupling, which is different from the traditional one. The coupling hole has both strong electrical coupling and strong magnetic coupling, and its principle is realized by the phase difference between the inner and outer arcs. Structure 1 and Structure 2 couple the energy of port 2 to port 4, and generate a resonant frequency point at port 4; Structure 3 differs in the position of the gap, and the energy originally coupled to the upper layer is all output from port 2, and a resonance frequency is generated at port 2. a resonant frequency point. Finally, the present invention achieves high frequency and high selectivity by using a special Leroy ring structure which is different from traditional coupling holes and superstructures.

Description

technical field [0001] The invention relates to microwave technology, in particular to a D-band SIW Leroy coupling structure and a design method thereof. Background technique [0002] The D-band is: 110-170GHz, located in the terahertz band. With the increasing shortage of spectrum resources, the high frequency band has gradually become the focus of attention and has important communication research value. As a microwave transmission line, SIW has the characteristics of good transmission performance. The traditional use of microwave transmission lines to achieve filtering effects is mainly square, circular, and their combination, and often requires mutual coupling between multiple cavities to achieve high selectivity, which is relatively complex and relatively insufficient in high selectivity. . SUMMARY OF THE INVENTION [0003] In view of the above-mentioned problems or deficiencies, in order to solve the problems of the relatively complex and relatively insufficient h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P5/12H01P3/18H01P11/00
CPCH01P5/12H01P3/18H01P11/00H01P11/001
Inventor 汪晓光畅甲维赵晓琴
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA