Manufacturing method of film bulk acoustic resonator

A thin-film bulk acoustic wave and manufacturing method technology, applied in electrical components, impedance networks, etc., can solve the problems of inability to meet high-performance radio frequency systems, the quality factor cannot be further improved, and the structural strength is not enough, so as to avoid high-frequency coupling problems, The effect of eliminating boundary clutter and improving mechanical strength

Pending Publication Date: 2022-03-29
NINGBO SEMICON INT CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the cavity-type thin-film bulk acoustic resonators produced at present have problems such as shear wave loss and insufficient structural strength, which make the quality factor (Q) unable to be further improved, and the yield rate is low, so they cannot meet the needs of high-performance radio frequency systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of film bulk acoustic resonator
  • Manufacturing method of film bulk acoustic resonator
  • Manufacturing method of film bulk acoustic resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1 of the present invention provides a method for manufacturing a thin film bulk acoustic resonator, the method comprising:

[0030] S01: providing a first substrate; forming a cavity on the upper surface of the first substrate;

[0031] S02: forming a sacrificial layer in the cavity;

[0032] S03: sequentially forming a stacked first electrode, a piezoelectric layer, and a second electrode on the first substrate and on the sacrificial layer;

[0033] S04: At least one of the first electrode and the second electrode has an annular arched bridge, the annular arched bridge is raised away from the piezoelectric layer, and the inner surface of the annular arched bridge forms a ring void;

[0034] S05: removing the sacrificial layer.

[0035] It should be noted that the step S0N does not represent a sequence.

[0036] Figure 1 to Figure 7 It is a structural diagram corresponding to each step of the manufacturing method of the thin film bulk acoustic resonator ...

Embodiment 2

[0051] Figure 8 to Figure 15 It is a structural diagram corresponding to each step of the manufacturing method of the thin film bulk acoustic resonator in this embodiment. Please refer below Figure 8 to Figure 15 The manufacturing method of the thin film bulk acoustic resonator will be described. The difference between this embodiment and Embodiment 1 is that in this embodiment, the first electrode 101 is also formed with an annular arched bridge.

[0052] refer to Figure 8 with Figure 9 , providing a first substrate 100, the first substrate 100 is a double-layer structure, including a base 100a and a supporting layer 100b on the base 100a. A cavity 200 is formed on the upper surface of the first substrate 100 through an etching process, and a sacrificial layer 201 is formed in the cavity. For the materials, structures, and methods involved in the above steps, refer to the relevant description of Embodiment 1, and will not be repeated here.

[0053] refer to Figure...

Embodiment 3

[0060] Figure 16 to Figure 19 It is a structural diagram corresponding to each step of the manufacturing method of the thin film bulk acoustic resonator in this embodiment. Please refer below Figure 16 to Figure 19 The manufacturing method of the thin film bulk acoustic resonator will be described. In this embodiment, a groove 40 is formed in the piezoelectric layer 102 .

[0061] refer to Figure 16 , in this embodiment, the steps before forming the piezoelectric layer 102 are the same as in Embodiment 2, and the relevant steps refer to Embodiment 2, and the drawings refer to Figure 8 to Figure 13 , after forming the piezoelectric layer 102, refer to Figure 16 , forming a trench 40 in the piezoelectric layer 102 . The trench 40 may be formed through a dry etching process. In this embodiment, the trench 40 is a closed ring and penetrates the piezoelectric layer 102 to expose the second sacrificial layer below the piezoelectric layer 102 . The inner sidewall of the tr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a manufacturing method of a film bulk acoustic resonator. The manufacturing method comprises the following steps: providing a first substrate; forming a cavity on the upper surface of the first substrate; forming a sacrificial layer in the cavity; sequentially forming a first electrode, a piezoelectric layer and a second electrode which are stacked on the first substrate and the sacrificial layer; at least one of the first electrode and the second electrode is provided with an annular arch-shaped bridge, the annular arch-shaped bridge protrudes away from the piezoelectric layer, and an annular gap is defined by the inner surface of the annular arch-shaped bridge; and removing the sacrificial layer. The first electrode and / or the second electrode form an annular arch bridge structure, the annular arch bridge forms a closed ring, and the annular arch bridge and the surface of the plane where the piezoelectric layer is located form an annular gap, so that the end parts of the first electrode and / or the second electrode at the boundary of the effective resonance area are in contact with gas in the gap; therefore, the effect of eliminating the boundary clutter of the electrode in the effective resonance area is achieved, and the Q value of the resonator is improved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a method for manufacturing a thin-film bulk acoustic wave resonator. Background technique [0002] With the continuous development of wireless communication technology, in order to meet the multi-functional requirements of various wireless communication terminals, terminal equipment needs to be able to transmit data using different carrier spectrums. At the same time, in order to support sufficient data transmission rates within a limited bandwidth, for Radio frequency systems also present stringent performance requirements. The RF filter is an important part of the RF system, which can filter out interference and noise outside the communication spectrum to meet the signal-to-noise ratio requirements of the RF system and communication protocols. Taking a mobile phone as an example, since each frequency band needs to have a corresponding filter, dozens of filter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/13H03H9/17
CPCH03H3/02H03H9/02015H03H9/02125H03H9/02086H03H9/131H03H9/174H03H9/173H03H2003/021H03H2003/023H03H2003/028H03H2009/02173H03H9/17H03H9/02H03H9/13
Inventor 黄河
Owner NINGBO SEMICON INT CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap