Film bulk acoustic resonator, manufacturing method thereof and filter

A thin-film bulk acoustic wave and resonator technology, which is applied to electrical components, impedance networks, etc., can solve the problems that cannot meet the requirements of high-performance radio frequency systems, and the quality factor cannot be further improved, so as to achieve improved conductivity, good structural stability, and improved accuracy. sexual effect

Pending Publication Date: 2022-03-29
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the quality factor (Q) of the cavity-type thin-film bulk acoustic resonator produced at present cannot be further improved, so it cannot meet the needs of high-performance radio frequency systems

Method used

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  • Film bulk acoustic resonator, manufacturing method thereof and filter
  • Film bulk acoustic resonator, manufacturing method thereof and filter
  • Film bulk acoustic resonator, manufacturing method thereof and filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Embodiment 1 provides a thin film bulk acoustic resonator, figure 1 For a schematic cross-sectional structure diagram of a thin film bulk acoustic resonator provided in Embodiment 1 of the present invention, please refer to figure 1 , the thin film bulk acoustic resonator consists of:

[0051] The piezoelectric stack structure 2, the piezoelectric stack structure 2 includes a first electrode 21, a piezoelectric layer 22, and a second electrode 23 stacked sequentially from bottom to top, at least one of the first electrode 21 and the second electrode 23 has an annular groove 24 running through the corresponding electrode;

[0052] The electrode lead-out structure 3 is provided on the corresponding electrode provided with the annular groove 24, the electrode lead-out structure 3 covers at least part of the ring-shaped groove 24 and extends to the invalid resonance area, and the electrode lead-out structure 3 includes a protruding direction away from the piezoelectric lay...

Embodiment 2

[0069] Embodiment 2 provides a thin film bulk acoustic resonator, figure 2 It is a schematic cross-sectional structure diagram of a thin film bulk acoustic resonator in Embodiment 2 of the present invention. The difference between this embodiment and Embodiment 1 is that the piezoelectric layer 22 in Embodiment 1 is provided with a first groove 25, and in Embodiment 2 The piezoelectric layer 22 is a complete film layer, specifically: the piezoelectric layer 22 is a complete film layer, covers the first cavity 121 and extends to the first substrate 1 outside the first cavity 121 . The piezoelectric layer 22 is complete without being etched, which can ensure the structural strength of the resonator and improve the yield of the resonator. Other structural features of the thin film bulk acoustic resonator in this embodiment are the same as those in Embodiment 1, and will not be repeated here.

Embodiment 3

[0071] Embodiment 3 provides a thin film bulk acoustic resonator, image 3 It is a schematic cross-sectional structure diagram of a thin film bulk acoustic resonator according to Embodiment 3 of the present invention. The difference between this embodiment and Embodiment 1 is that the electrode lead-out structure 3 in Embodiment 1 is only provided on the first electrode 21 or the second electrode 23 , the electrode lead-out structure in Embodiment 3 is disposed on the first electrode 21 and the second electrode 23 . Specifically:

[0072] In this embodiment, both the first electrode 21 and the second electrode 24 are provided with an electrode lead-out structure 3, and the electrode lead-out structure arranged on the first electrode 21 and the electrode lead-out structure arranged on the second electrode 23 respectively have a structure extending to The second part outside the effective resonance area, the second part is used as the electrode connection end. In addition, the...

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PUM

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Abstract

The invention relates to a film bulk acoustic resonator, a manufacturing method thereof and a filter, and the film bulk acoustic resonator comprises a piezoelectric laminated structure, the piezoelectric laminated structure comprises a first electrode, a piezoelectric layer and a second electrode which are sequentially laminated from bottom to top, and at least one of the first electrode and the second electrode is provided with an annular groove penetrating through the corresponding electrode; an electrode leading-out structure is arranged on the corresponding electrode provided with the annular groove, the electrode leading-out structure covers at least part of the annular groove and extends to the invalid resonance area, the electrode leading-out structure comprises an annular arch bridge protruding in the direction away from the piezoelectric layer, an annular gap is defined by the inner surface of the arch bridge, and the annular gap is opposite to the annular groove. According to the invention, the boundary of the effective area is defined by the area where the annular gap of the electrode extraction structure is located, and the end part of the corresponding electrode at the boundary of the effective area is in contact with the gas in the gap through the annular groove, so that the effect of eliminating the boundary clutter of the electrode in the effective area is achieved, and the Q value of the resonator is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a film bulk acoustic wave resonator, a manufacturing method and a filter. Background technique [0002] Since the development of analog RF communication technology in the early 1990s, RF front-end modules have gradually become the core components of communication equipment. Among all RF front-end modules, filters have become the components with the strongest growth momentum and the greatest development prospects. With the rapid development of wireless communication technology and the maturity of 5G communication protocols, the market has also put forward stricter standards for the performance of RF filters in all aspects. The performance of a filter is determined by the resonator units that make up the filter. Among the existing filters, the film bulk acoustic resonator (FBAR) has the characteristics of small size, low insertion loss, large out-of-band suppress...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/02H03H9/13H03H9/205H03H9/58
CPCH03H3/02H03H9/02015H03H9/02118H03H9/02157H03H9/02H03H9/13H03H9/205H03H9/588H03H2003/023H03H2003/028H03H2009/02196H03H9/58
Inventor 黄河
Owner NINGBO SEMICON INT CORP
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