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Manufacturing method of film bulk acoustic resonator and filter

A thin-film bulk acoustic wave and manufacturing method technology, applied in electrical components, impedance networks, etc., can solve the problems that the quality factor cannot be further improved, cannot meet the high-performance radio frequency system, etc., and achieves improved conductivity, improved accuracy, and good structural stability. sexual effect

Pending Publication Date: 2022-03-29
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the quality factor (Q) of the cavity-type thin-film bulk acoustic resonator produced at present cannot be further improved, so it cannot meet the needs of high-performance radio frequency systems

Method used

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  • Manufacturing method of film bulk acoustic resonator and filter
  • Manufacturing method of film bulk acoustic resonator and filter
  • Manufacturing method of film bulk acoustic resonator and filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] figure 1 It is a flow chart of the manufacturing method of the thin film bulk acoustic resonator according to Embodiment 1 of the present invention, referring to figure 1 , embodiment 1 provides a kind of manufacturing method of thin film bulk acoustic resonator, the manufacturing method of thin film bulk acoustic resonator comprises:

[0039] S01: forming a first electrode, a piezoelectric layer, and a second electrode, and the piezoelectric layer is located between the first electrode and the second electrode;

[0040] S02: Forming an annular groove penetrating through the corresponding electrode on at least one of the first electrode and the second electrode;

[0041] S03: Forming an electrode lead-out structure with an arched bridge on the electrode with a ring-shaped groove, including: forming a ring-shaped sacrificial protrusion; forming an electrode lead-out structure covering the ring-shaped sacrificial protrusion and overlapping the edge of the electrode edge ...

Embodiment 2

[0077] Embodiment 2 provides a method for manufacturing a thin film bulk acoustic resonator, Figure 12 It is a schematic structural diagram of a thin film bulk acoustic resonator manufactured according to the manufacturing method of a thin film bulk acoustic resonator in this embodiment. The difference between this embodiment and Embodiment 1 is that the piezoelectric layer 22 in Embodiment 1 is formed with a first groove 25. The piezoelectric layer 22 in this embodiment is a complete film layer, the step of etching the piezoelectric layer 22 in the above-mentioned embodiment 1 is omitted, and the remaining steps refer to the above-mentioned embodiment 1. Specifically: the piezoelectric layer 22 is not etched, it is a complete film layer, covers the first cavity 121 and extends to the first substrate 11 outside the first cavity 121, so as to ensure the structural strength of the resonator and improve Resonator yield.

Embodiment 3

[0079] Embodiment 3 provides a method for manufacturing a thin film bulk acoustic resonator, Figure 13-19 It is a schematic structural diagram of a thin film bulk acoustic resonator manufactured according to the manufacturing method of a thin film bulk acoustic resonator in this embodiment. The difference between this embodiment and Embodiment 1 is that the first electrode 21 and the second electrode 23 One is provided with an electrode lead-out structure 3 , and in this embodiment, both the first electrode 21 and the second electrode 24 are provided with an electrode lead-out structure 3 . Specifically:

[0080] In this example, refer to Figure 13-15 Specifically, the second electrode 23, the piezoelectric layer 22, and the first electrode 21 are sequentially formed on the carrier substrate 4; the first electrode 21 is etched to form a The groove of the electrode 23, wherein, the part that runs through the first electrode 21 and the second electrode 23 is an annular groov...

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Abstract

The invention relates to a manufacturing method of a film bulk acoustic resonator and a filter. The manufacturing method comprises the following steps: forming a first electrode, a piezoelectric layer and a second electrode; forming an annular groove penetrating through the corresponding electrode on at least one of the first electrode and the second electrode; forming an electrode leading-out structure with an arch bridge on the electrode with the annular groove; forming a support layer on the first electrode; the supporting layer is patterned, a first cavity penetrating through the supporting layer is formed, and the arch bridge of the electrode leading-out structure is located in the range of the first cavity; providing a first substrate to cover the first cavity; and removing the annular sacrificial bulge to form an annular gap, wherein the annular gap is opposite to the annular groove. According to the invention, the boundary of the effective resonance area is defined through the area where the annular gap of the electrode extraction structure is located, and the end part of the corresponding electrode at the boundary of the effective resonance area is in contact with the gas in the gap through the annular groove, so that the effect of eliminating the boundary clutter of the electrode in the effective resonance area is achieved, and the Q value of the resonator is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a method for manufacturing a thin-film bulk acoustic wave resonator and a filter. Background technique [0002] Since the development of analog RF communication technology in the early 1990s, RF front-end modules have gradually become the core components of communication equipment. Among all RF front-end modules, filters have become the components with the strongest growth momentum and the greatest development prospects. With the rapid development of wireless communication technology and the maturity of 5G communication protocols, the market has also put forward stricter standards for the performance of RF filters in all aspects. The performance of a filter is determined by the resonator units that make up the filter. Among the existing filters, the film bulk acoustic resonator (FBAR) has the characteristics of small size, low insertion loss, large out-of-band ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/13H03H9/205H03H9/58
CPCH03H3/02H03H9/02015H03H9/02118H03H9/02157H03H9/02H03H9/13H03H9/205H03H9/588H03H2003/023H03H2003/028H03H2009/02196H03H9/58H03H9/17H03H9/15
Inventor 黄河
Owner NINGBO SEMICON INT CORP
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