Manufacturing method of film bulk acoustic resonator

A film bulk acoustic wave and manufacturing method technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of radio frequency systems that cannot meet high performance, the quality factor cannot be further improved, and the structural strength is not enough, so as to eliminate boundary clutter and suppress Effect of shear wave loss and improvement of mechanical strength

Pending Publication Date: 2022-03-29
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the cavity-type thin-film bulk acoustic resonators produced at present have problems such as shear wave loss and insufficient structural strength, which make the quality factor (Q) unable to be further improved, and the yield rate is low, so they cannot meet the needs of high-performance radio frequency systems.

Method used

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  • Manufacturing method of film bulk acoustic resonator
  • Manufacturing method of film bulk acoustic resonator
  • Manufacturing method of film bulk acoustic resonator

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Experimental program
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Embodiment 1

[0029] Embodiment 1 of the present invention provides a method for manufacturing a thin-film bulk acoustic resonator, comprising:

[0030] S01: forming a first electrode, a second electrode and a piezoelectric layer, wherein the piezoelectric layer is located between the first electrode and the second electrode;

[0031] S02: forming a support layer on the first electrode;

[0032] S03: patterning the support layer to form a first cavity penetrating the support layer;

[0033] S04: forming a first substrate on the support layer, the first substrate covering the first cavity;

[0034] S05: At least one of the first electrode and the second electrode has an arched bridge, and a method for forming an electrode with an arched bridge includes:

[0035] forming an annular sacrificial protrusion; depositing a conductive material layer to cover the annular sacrificial protrusion and a peripheral area of ​​the annular sacrificial protrusion; removing the annular sacrificial protrusio...

Embodiment 2

[0051] Figure 8 to Figure 13 It is a structural diagram corresponding to each step of the manufacturing method of the thin film bulk acoustic resonator in this embodiment. Please refer below Figure 8 to Figure 13 The manufacturing method of the thin film bulk acoustic resonator will be described. The difference between this embodiment and Embodiment 1 is that a groove 40 is formed in the piezoelectric layer 102 .

[0052] refer to Figure 8 , providing a carrier substrate 1000, on which a second electrode 103 is formed; on the second electrode 103, a piezoelectric layer 102 is formed. Regarding the material of the carrier substrate 1000 , the materials and formation methods of the second electrode 103 and the piezoelectric layer 102 refer to Embodiment 1, and details are not repeated here. After the piezoelectric layer 102 is formed, the trench 40 is formed in the piezoelectric layer 102, and the trench 40 can be formed by a dry etching process. The dry etching process i...

Embodiment 3

[0059] Figure 14 to Figure 20 It is a structural diagram corresponding to each step of the manufacturing method of the thin film bulk acoustic resonator in this embodiment. Please refer below Figure 14 to Figure 20 The manufacturing method of the thin film bulk acoustic resonator will be described. In this embodiment, the order of forming the first electrode, the piezoelectric layer and the second electrode is different, and both the first electrode and the second electrode are formed with an arched bridge.

[0060] refer to Figure 14 , providing a carrier substrate 1000 on which a piezoelectric layer 102 is formed. A trench 40 is formed in the piezoelectric layer 102 . Refer to Embodiment 1 for the material of the carrier substrate 1000 , the material and the forming method of the piezoelectric layer 102 , and refer to Embodiment 2 for the structure and forming method of the trench 40 .

[0061] refer to Figure 15 , forming a sacrificial material layer, covering the...

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Abstract

The invention discloses a manufacturing method of a film bulk acoustic resonator, which comprises the following steps: forming a first electrode, a second electrode and a piezoelectric layer between the first electrode and the second electrode; forming a support layer on the first electrode; patterning the support layer to form a first cavity penetrating through the support layer; forming a first substrate on the supporting layer, wherein the first substrate covers the first cavity; at least one of the first electrode and the second electrode is provided with an arch bridge. The forming method of the electrode with the arch bridge comprises the following steps: forming an annular sacrifice bulge; depositing a conductive material layer to cover the annular sacrifice bulge and the peripheral area of the annular sacrifice bulge; and removing the annular sacrificial bulge to form an annular gap. The whole effective resonance area is surrounded by the arch bridge structure of the electrode from the periphery of the effective resonance area, so that the mechanical strength of the resonator is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a method for manufacturing a thin-film bulk acoustic wave resonator. Background technique [0002] With the continuous development of wireless communication technology, in order to meet the multi-functional requirements of various wireless communication terminals, the terminal equipment needs to be able to transmit data using different carrier frequency spectrums. RF systems also impose stringent performance requirements. The radio frequency filter is an important part of the radio frequency system, which can filter out the interference and noise outside the communication spectrum to meet the requirements of the radio frequency system and the communication protocol for the signal-to-noise ratio. Taking a mobile phone as an example, since each frequency band needs a corresponding filter, dozens of filters may need to be set in a mobile phone. [0003] Generally,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/17
CPCH03H3/02H03H9/171H03H2003/023H03H9/17
Inventor 黄河
Owner NINGBO SEMICON INT CORP
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