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Via hole etching method and via hole etching device

A technology for etching devices and vias, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems affecting the yield rate of display panels, etc.

Pending Publication Date: 2022-04-01
HEFEI VISIONOX TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, there are certain defects in the etching in the hole, which seriously affects the yield of the display panel.

Method used

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  • Via hole etching method and via hole etching device
  • Via hole etching method and via hole etching device
  • Via hole etching method and via hole etching device

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Embodiment Construction

[0051] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0052] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes ...

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Abstract

The invention relates to a via hole etching method and a via hole etching device, and the method comprises the steps: etching a via hole in the surface of a second film layer in a direction from the second film layer to a substrate; and when the light intensity change rate of a product generated by etching the via hole reaches a first preset value, the position of the etched via hole reaches the interface of the first film layer and the second film layer. And then continuously etching the first film layer to form a via hole. When the via hole is etched on the second film layer, the etching position of the via hole can be roughly judged by monitoring the light intensity change rate of a product generated by the via hole. Errors caused by monitoring delay possibly exist when the etching position of the via hole is judged according to the light intensity change rate of a product. The thickness of the first film layer is known, and the material quality and the density of the first film layer are relatively uniform, so that the etching rate of the first film layer is easy to control. In the final stage of etching the via hole, the etching depth of the via hole in the first film layer is controlled by controlling the etching time, so that the precision of etching the final position of the first via hole can be improved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a via etching method and a via etching device. Background technique [0002] In the manufacturing process of the display panel, forming via holes by etching is a common process. However, in the prior art, there are certain defects in the etching in the hole, which seriously affects the yield of the display panel. Contents of the invention [0003] Based on this, it is necessary to provide a via etching method and a via etching device for the above technical problems. [0004] An embodiment of the present application provides a via etching method, including: [0005] providing a substrate, one side of the substrate is stacked with a first film layer and a second film layer, and the second film layer is disposed on a side of the first film layer away from the substrate; [0006] Etching via holes on the surface of the second film layer in the direction from the seco...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/66H01L21/67H01L21/77
Inventor 梅运柱贾马龙常李阳张子曰曹志文李伟华李阳
Owner HEFEI VISIONOX TECH CO LTD
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