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Realization method for resetting and read-write of 1T1M cross array based on ternary memristor

A technology of cross array and implementation method, applied in instruments, static memory, read-only memory, etc., can solve the problems of time-consuming and power consumption, and achieve the effect of clear principles and concise design ideas

Pending Publication Date: 2022-04-08
HANGZHOU DIANZI UNIV
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Problems solved by technology

[0002] In the von Neumann architecture, the storage and processing of data are independent of each other, and the information transmission between the processor and the memory consumes a lot of time and power consumption.

Method used

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  • Realization method for resetting and read-write of 1T1M cross array based on ternary memristor

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Embodiment Construction

[0009] In order to enable those skilled in the art to better understand the solution of the present invention, the model proposed by the present invention will be further described below in conjunction with the drawings and specific embodiments.

[0010] The reset operation is an operation to initialize the cross array. After reset, all memory cells in the cross array will be set to logic "0", that is, the resistance value of the three-valued memristor will be set to R H . According to the characteristics of the three-value memristor, after applying a voltage less than or equal to -1.2V to the three-value memristor, the resistance value of the memristor will switch from any resistance state to a high resistance state, so this scheme will use - 1.21V is used as the reset voltage for reset operation, denoted as V RESET .

[0011] by figure 1 Take the 4×4 cross array in the example as an example to realize array reset. First, switch the S 1 -S 4 closed, and the bidirectiona...

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Abstract

The invention relates to a reset and read-write implementation method based on a three-valued memristor 1T1M cross array. An array unit is formed by connecting a three-valued memristor Mi in series with a crystal Ti tube. The break-over voltage of the transistor is 4V and is recorded as VDD, and three stable resistance values of the three-valued memristor are RL, RM and RH respectively. The reset and read-write method for the three-valued memristor 1T1M cross array is designed, the design thought is simple, the principle is clear, and the method can be easily applied to related fields.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and in particular relates to a method for implementing resetting and reading and writing of a cross-array based on a ternary memristor 1T1M. Background technique [0002] In the von Neumann architecture, the storage and processing of data are independent of each other, and the information transmission between the processor and the memory consumes a lot of time and power consumption. Due to its small size, low power consumption, and non-volatile characteristics, memristors have natural advantages as storage units, and memristors are expected to replace traditional CMOS transistor devices for digital logic operations. Therefore, memristor-based memories It can integrate "calculation" and "storage" to realize the integration of storage and calculation. [0003] At present, the research on the memristor model mainly focuses on the binary logic. Compared with the binary signal, the ternary sig...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00G11C16/34G11C5/14
Inventor 张新睿王晓媛李谱黎小静
Owner HANGZHOU DIANZI UNIV
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