LDMOS switching device and manufacturing method thereof
A manufacturing method and technology of switching devices, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty in radio frequency devices, and achieve high output power and efficiency, high operating voltage, and high thermal conductivity properties Effect
Pending Publication Date: 2022-04-12
SUZHOU LOONGSPEED SEMICON TECH CO LTD
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[0004] The main purpose of this application is to provide an LDMOS switching device and its manufacturing method to solve the problem that radio frequency devices in the prior art are difficult to work under high ambient temperature
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[0024] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.
[0025] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.
[0026] It should be noted that the terms "first" and "second...
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Abstract
The invention provides an LDMOS switching device and a manufacturing method thereof. The manufacturing method comprises the following steps that a gate oxide layer and a gate electrode are formed on the first surface of a semi-insulating SiC substrate, and the gate electrode is located on the side, away from the first surface, of the gate oxide layer; and forming a drift region in the semi-insulating SiC substrate, and forming a source / drain region in the semi-insulating SiC substrate at two sides of the gate, so that the drain region in the source / drain region is located in the drift region. According to the method, the RF LDMOS switching device is directly manufactured on the semi-insulating SiC substrate, the process design of the channel enhancement type RF LDMOSFET can be achieved through SiC oxidation and ion implantation, the high heat conductivity attribute of SiC is brought into full play through the process, the high bond energy of SiC enables the device to have higher working voltage, and the device can be applied to the field of semiconductor devices. And high output power and efficiency can still be realized in a high-temperature and high-pressure environment.
Description
technical field [0001] The present application relates to the technical field of semiconductors, in particular to an LDMOS switching device and a manufacturing method thereof. Background technique [0002] For the existing RF LDMOSFET, its overall structure is usually made on Si material. The silicon LDMOS device is limited by the trade-off between on-resistance (Ron) and rated voltage (BV), which reaches the limit of silicon. At the same time, the heat dissipation of silicon material The conductivity is low. For higher operating voltage and higher ambient temperature, Si-based RF LDMOSFET can no longer meet the requirements. Due to temperature limitations, its power efficiency is often low and difficult to improve. [0003] Currently, RF devices capable of operating at high ambient temperatures are mainly GaN HEMTs. GaN has strong atomic bonds and high thermal conductivity. However, GaN is difficult to grow an oxide layer, resulting in low reliability of the device, and Ga...
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IPC IPC(8): H01L21/336H01L29/78
Inventor 李荣伟
Owner SUZHOU LOONGSPEED SEMICON TECH CO LTD