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Abnormal reworking method for thinning back surface of wafer

A backside thinning and abnormal technology, which is used in the manufacture of conveyor objects, electrical components, semiconductor/solid-state devices, etc., can solve the problems that the wafer cannot continue to be transferred, scrap abnormal wafers, etc., and achieve the effect of reducing scrap and improving product yield.

Pending Publication Date: 2022-04-12
GUANGZHOU CANSEMI TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the thinning process, due to the alarm or failure of the crystal back thinning machine, there is a problem that the wafer cannot continue to be transferred to the Z2 grinding wheel for fine grinding after the rough grinding of the Z1 grinding wheel. In this case, there will be an exception of facing scrapping chip

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  • Abnormal reworking method for thinning back surface of wafer
  • Abnormal reworking method for thinning back surface of wafer
  • Abnormal reworking method for thinning back surface of wafer

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Embodiment Construction

[0028] The abnormal rework method for wafer backside thinning proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0029] figure 1 It is a flowchart for thinning the backside of a wafer using the Taiko process. Such as figure 1 As shown, the normal process of thinning the backside of the wafer using the Taiko process includes: sending the wafer placed in the wafer transfer box (FOUP) to the backside thinning machine; Centering to determine the center of the back of the wafer; send the wafer to the rough grinding table, the first grinding wheel (Z1) will roughly gr...

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PUM

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Abstract

The invention provides an abnormal reworking method for wafer back thinning. The method is used for reworking an abnormal wafer of which the back thinning is not completed. The abnormal reworking method comprises the following steps: providing a support sheet with the same radial size as an abnormal wafer; the back faces of the supporting pieces face upwards and are conveyed to an alignment workbench; detecting the center of the back surface of the supporting sheet and suspending the wafer back thinning machine; forming a water film on the back surface of the supporting sheet; the abnormal wafer is placed on the back face of the supporting piece with the front face facing downwards, the edges of the abnormal wafer and the supporting piece coincide, and the abnormal wafer and the supporting piece are bonded through the water film; the wafer back thinning machine is started, the conveying manipulator grabs the abnormal wafer and the supporting piece from the back face of the abnormal wafer, and after the wafer back thinning machine is lifted to a set height, the wafer back thinning machine is suspended; stripping the support sheet from the front surface of the abnormal wafer; and the wafer back thinning machine is started again, and the abnormal wafer is transferred to the corresponding grinding workbench. Therefore, the abnormal wafer can be reworked, and the yield of products can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an abnormal rework method for wafer back thinning. Background technique [0002] With the development of semiconductor technology, integrated circuit technology has begun research on 5nm or even 3nm. With the reduction of feature size, the number of transistors per unit area of ​​integrated circuits has doubled, and the functions of integrated circuits have also become more powerful. When discussing how to reduce the thermal resistance of the device in the integrated circuit, and do a good job in the heat dissipation and cooling of the device and other key issues, the backside thinning process of the wafer was proposed. [0003] A commonly used wafer backside thinning process is the Taiko process. When using the TaiKo process to grind the back of the wafer, the peripheral edge of the wafer will be kept, and only the inner circle (that is, the central area of ​​the back o...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/677H01L21/68H01L21/683
Inventor 徐永闵源
Owner GUANGZHOU CANSEMI TECH INC