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Germanium etching solution with controllable lateral erosion amount

A technology of etching solution and side etching amount, which is applied in the field of electronic chemicals and can solve the problems of difficulty in controlling the amount of side etching in germanium etching.

Active Publication Date: 2022-04-15
湖北兴福电子材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the problem of difficult control of the side etching amount of germanium wet etching in the existing semiconductor integrated circuit technology, and aims to provide a germanium etching solution formula with controllable side etching amount and its use method

Method used

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  • Germanium etching solution with controllable lateral erosion amount
  • Germanium etching solution with controllable lateral erosion amount
  • Germanium etching solution with controllable lateral erosion amount

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A germanium etchant with controllable amount of side etching, its component content is as shown in table 3:

[0044] Table 3 Embodiment 1 component and content

[0045]

[0046] Enumerate each component and content configuration germanium etchant by table 3, and guide germanium etchant in the chemical buffer tank of tank type etching machine, the temperature of etchant is controlled at 25 ℃; figure 1 , 2 The 10 semiconductor devices shown are put horizontally into the wafer carrier. The thickness of the germanium film layer in the semiconductor device is 390nm. In the germanium etching solution; the circulation flow rate of the chemical buffer tank is set to 10L / min, and the etching time is 10min. After the etching is completed, take out the wafer basket holding the semiconductor device, and put it in a thermal rapid drying device for cleaning and drying.

[0047] During the etching process, the exposed germanium film layer needs to be completely etched. During thi...

Embodiment 2

[0049] Same as Example 1, only the oxidant is adjusted from n-pyridine oxide to hydrogen peroxide, the content of hydrogen peroxide is 10%, and the content of the remaining components remains unchanged, which is set as Example 2, and the semiconductor device etching steps and testing methods are the same as in Example 1.

[0050] SEM test results see Figure 5 , the etching effect is shown in Table 4. The oxidant in this embodiment is hydrogen peroxide. Compared with Example 1, the amount of side etching has increased by about 714nm, but the etching effect is still better. The ratio of the amount of side etching to the thickness of germanium is less than 2, and the photoresist is not peeled off.

Embodiment 3

[0052]Same as Example 1, only the oxidant is adjusted from n-pyridine oxide to peracetic acid, the content of peracetic acid is 10%, and the content of the rest of the components remains unchanged, which is set as Example 3, and the semiconductor device etching steps and testing methods are the same as in Example 1 .

[0053] SEM test results see Figure 6 , the etching effect is shown in Table 4. The oxidizing agent in this embodiment is peracetic acid. Compared with Example 1, the amount of side etching is increased to 1.05 μm, and the etching effect is better. The ratio of the amount of side etching to the thickness of germanium is less than 3, and the photoresist is not peeled off.

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Abstract

The invention belongs to the field of electronic chemicals, and particularly relates to germanium etching liquid with controllable lateral erosion amount and a preparation method thereof. The etching solution is mainly used for etching a germanium film layer on a wafer and controlling the lateral erosion amount below a photoresist structure, and comprises an oxidizing agent, a fluorine ion source, a viscosity regulator, a pH regulator and high-purity water. The oxidizing agent oxidizes germanium without damaging the silicon substrate; the fluorine ion source mainly plays a role in complexing and dissolving germanium oxide; the viscosity modifier is used for controlling the viscosity of the etching liquid and improving the lateral undercutting capability; the photoresist on the germanium film layer is very sensitive to the pH value, and the pH regulator can prevent the photoresist from being stripped when the pH value is too low.

Description

technical field [0001] The invention belongs to the field of electronic chemicals, and in particular relates to a germanium etching solution with a controllable side etching amount and an etching method thereof. Background technique [0002] Before the 1960s, germanium was widely used as an important semiconductor material. Later, due to the rise of silicon materials, the amount of germanium used in the semiconductor field was greatly reduced. However, its development and application in infrared, optical fiber, catalyst and other fields has continued. In recent years, wireless energy transmission technology has developed rapidly and has attracted more and more attention from the industry. For the application of microwave wireless energy transmission systems, germanium Schottky diodes, as the core components of rectifier circuits, show extremely excellent performance. Germanium has significantly higher hole mobility and electron mobility than silicon, so germanium transistor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/14C23F1/30
CPCY02P70/50
Inventor 尹印陈小超万杨阳贺兆波张庭余迪彭浩冯凯王书萍
Owner 湖北兴福电子材料股份有限公司