Germanium etching solution with high etching taper angle
An etching solution and etching technology, which is applied in the field of electronic chemicals, can solve the problems such as difficulty in controlling the cone angle of germanium wet etching, and achieve the effect of high etching cone angle
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Embodiment 1
[0045] A germanium etchant with controllable amount of side etching, its component content is as shown in table 2:
[0046] Table 2 Embodiment 1 component and content
[0047]
[0048] Enumerate each component and content configuration germanium etchant by table 2, to figure 1 The germanium structure sheet shown is left to soak and etch at 25°C for 10 minutes. The substrate of the germanium structure sheet is silicon, and there is a germanium film layer with a thickness of 390nm on the silicon substrate. After the layer is etched, the germanium film layer under the photoresist and the silicon substrate form an etching cone angle. After the etching is completed, it is cleaned with ultrapure water and dried with nitrogen, and then the SEM slice test is performed on the structural sheet. The SEM picture is as follows Figure 4 As shown, etching conditions and results are shown in Table 3. The exposed germanium film layer in embodiment 1 is completely etched, and the etching ...
Embodiment 2
[0050] Same as Example 1, the content of the components in Example 2 is shown in Table 3, only the oxidant is adjusted from n-pyridine oxide to nitropyridine, the content of nitropyridine is 5%, and the content of the remaining components remains unchanged, which is set as Example 2. The etching steps and testing method of the germanium structure sheet are the same as those in Example 1.
[0051] SEM test results see Figure 5 , the etching effect is shown in Table 3. In this embodiment, the oxidizing agent is nitropyridine. Compared with the embodiment 1, the etching cone angle between germanium and silicon in the photoresist lower layer is reduced to about 61.8°.
Embodiment 3
[0053] Same as Example 1, the content of the components in Example 3 is shown in Table 3, only the oxidant is adjusted from n-pyridine oxide to peracetic acid, the content of peracetic acid is 5%, and the content of the remaining components is unchanged, which is set as Example 3. The etching steps and testing method of the germanium structure sheet are the same as those in Example 1.
[0054] SEM test results see Figure 6 , the etching effect is shown in Table 3. In this embodiment, the oxidizing agent is peracetic acid. Compared with the embodiment 1, the etching cone angle between germanium and silicon in the photoresist lower layer is reduced to about 63.8°.
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