Amplifier based on power adaptive bias adjustment technology

Abstract

The invention discloses an amplifier based on a power self-adaptive bias adjustment technology, which comprises an input ESD (Electro-Static Discharge) protection and blocking matching network, a first power self-adaptive bias adjustment amplification network, a second power self-adaptive bias adjustment amplification network, a double-path differential mode filter network and an output phase synthesis matching network, according to the improved stacked Darlington amplification structure based on the power self-adaptive bias adjustment technology, a high high-frequency gain index is obtained, a high-linearity index in a wide dynamic range can be achieved by combining a harmonic parasitic component phase compensation technology, and meanwhile a differential-mode filtering network between two amplification networks is utilized to achieve high-frequency gain amplification. Redundant differential mode signals of the improved stacked Darlington amplification structure are filtered out, and the stability of the amplifier is improved.

Description

technical field [0001] The invention belongs to the technical fields of 5G communication and integrated circuits, and in particular relates to the design of an amplifier based on power adaptive bias adjustment technology. Background technique [0002] With the development of software radio, broadband instrumentation, 5G communication and other technologies, the system bandwidth rate index has been continuously improved, which has led to higher requirements for the linearity index of the broadband amplifier in the market. Especially in order to deal with high-rate peak-to-average ratio signals, the amplifier is required to have good linearity indicators in a wide dynamic range. [0003] In order to improve the linearization index in the wide dynamic range of the drive amplifier chip, the following technical means can be used when designing the chip, but these means have some shortcomings: [0004] (1) Power back-off technology, that is, select a transistor with higher power ...

AI Technical Summary

Problems solved by technology

[0004] (1) Power back-off technology, that is, select a transistor with higher power as a low-power transistor, so that the amplifier works in the back-off linear amplification region to obtain a high linearity index, but in order to achieve high linearity within a wider dynamic range, For example, the use of a large transistor size greatly sacrifices the DC power consumption of the amplifier, and the efficiency of the amplifier is very low

[0005] (2) Envelope tracking technology, using detection circuit, bias adjustment technology, etc. to track the output power of the amplifier, and automatically adjust the bias circuit of the amplifier according to the dynamic range of the output power, thereby avoiding the high-power transistor in the power back-off technology The disadvantage of "one size fits all", this method has a better improvement effect, but the circuit structure is extremely complex, and it is difficult to integrate on-chip

[0006] (2) Intermodulation component cancellation technology, using the two amplifiers of the main road and the auxiliary road to work in class AB and class C modes, so that class C of the auxiliary road produces positive third-order intermodulation components, offsetting the negative third-order of the main road class AB Intermodulation components, thereby improving the IP3 index and P1dB index of the amplifier, but this way of direct synthesis and cancellation of the main and auxiliary amplifiers, there is a difference between the fundamental wave and harmonic phase of the signal, and the best cancellation effect cannot be achieved

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