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Substrate voltage dynamic selection method and circuit for extremely low negative voltage power signal switch

A technology of power signal and substrate voltage, applied in the dynamic selection method of substrate voltage and circuit field, can solve problems such as easy triggering of latch-up effect, achieve the effect of reducing the risk of latch-up effect and ensuring normal operation

Active Publication Date: 2022-07-22
CHENGDU YICHONG WIRELESS POWER TECH CO LTD
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Problems solved by technology

[0003] The purpose of the present invention is to provide a substrate voltage dynamic selection method and circuit for an extremely low negative voltage resistant power signal switch, so as to solve the problem that the latch is easily triggered when the drain is connected to -40V in the process of realizing the power signal switch of a non-completely isolated device lock-in problem

Method used

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  • Substrate voltage dynamic selection method and circuit for extremely low negative voltage power signal switch
  • Substrate voltage dynamic selection method and circuit for extremely low negative voltage power signal switch
  • Substrate voltage dynamic selection method and circuit for extremely low negative voltage power signal switch

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Embodiment

[0033] like figure 1 Shown is a very low negative voltage power signal switch with resistance to negative voltage and high voltage pins. Power tube FETA and power tube FETB are two high-voltage NLD NMOS back-to-back, and the drains of power tube FETA and power tube FETB are respectively Connect the high-voltage pin TERM1 and the high-voltage pin TERM2; the sources of the power tube FETA and the power tube FETB are connected. Since the high-voltage pin TERM1 and the high-voltage pin TERM2 are both resistant to negative voltage, the substrate cannot be directly grounded. If the substrate is directly grounded, the substrate is connected to the N-type buried layer of the power transistor FETA or the N-type buried layer of the power transistor FETB. The diode draws very high current at -40V at high voltage pin TERM1 and / or high voltage pin TERM2. The high-voltage pin TERM1 and the high-voltage pin TERM2 and the internal node of the substrate can be grounded to PGND using an electr...

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Abstract

The present invention provides a method and circuit for dynamically selecting a substrate voltage of an extremely low negative voltage power signal switch. Lowest voltage; connect the internal nodes of the substrate to the lowest voltage of choice. The invention can ensure the normal operation of the chip and greatly reduce the risk of latch-up effect by connecting the internal node of the substrate to the lowest voltage in the extremely low negative pressure power signal switch.

Description

technical field [0001] The present invention relates to the technical field of wireless charging, and in particular, to a method and circuit for dynamic selection of substrate voltage of a power signal switch with resistance to extremely low negative pressure. Background technique [0002] With the development of wireless charging technology, wireless charging of wearable devices is very common. At the same time, in order to facilitate switching between high-power wireless charging coil paths and low-power wearable wireless coil paths, special power with negative voltage (such as -40V) is required. The signal switch is used to control the switching of the coil channel. Since both ends of the power signal switch must withstand negative voltage, and the withstand voltage amplitude is required to be close to ±40V (the negative withstand voltage of ordinary chips is generally -0.3V), the conventional BCD (Bipolar-CMOS-DMOS) process is not completely isolated. The device to achi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567H03K17/081
Inventor 朱冬勇罗周益谢毅卿健章莉蔡波
Owner CHENGDU YICHONG WIRELESS POWER TECH CO LTD
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