On-chip integrated DBR laser with narrow linewidth output and preparation method thereof

Abstract

The invention discloses an on-chip integrated DBR (Distributed Bragg Reflector) laser with narrow linewidth output and a preparation method of the on-chip integrated DBR laser. Comprising a photonic integrated chip substrate, a distributed Bragg reflection laser and a semiconductor optical amplifier. The distributed Bragg reflection laser and the semiconductor optical amplifier are both integrated above the photonic integrated chip substrate; on one hand, the photonic integrated chip substrate can be made of III-V compound semiconductor materials, on the other hand, the photonic integrated chip substrate can be made of silicon optical semiconductor materials, and the III-V compound semiconductor materials need to be arranged above a designated area of the silicon optical semiconductor materials; the distributed Bragg reflection laser comprises a rear reflection region, a gain region, a phase region, an optical waveguide and a front reflection region, and is used for generating a narrow linewidth laser signal; and the semiconductor optical amplifier is connected with the front reflecting region and is used for amplifying and emitting a laser signal. The device is simple in structure and can be integrated on a photon chip, the size of a narrow linewidth laser in the prior art can be greatly reduced, and small-scale integrated and batch production of the device is facilitated; meanwhile, the laser output by the distributed Bragg reflection laser is narrower in line width and higher in power, and can meet the requirements of a next-generation high-speed optical communication system.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductor optoelectronics, in particular to an on-chip integrated DBR laser with narrow linewidth output and a preparation method thereof. Background technique [0002] In today's society, with the blowout development of modern communications, the demand for communication capacity has increased sharply. In order to meet the exponential growth of big data storage and ultra-large data center traffic, the single-channel communication capacity has been developed to 400Gbps. In order to further improve the communication rate and communication capacity, a new high-order modulation format or a coherent communication system needs to be adopted, and both of them have very strict requirements on the frequency stability of the laser and the laser linewidth. The frequency stability of the laser determines the transmission stability of the signal, and the laser linewidth affects the phase...

AI Technical Summary

Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides an on-chip integrated DBR laser with narrow linewidth output and its preparation method, which solves the problem of large volume, large power consumption, high cost, and high cost of various narrow linewidth semiconductor lasers in the prior art. Technical problems such as large spectral linewidth, poor device performance and stability

Images