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Source/drain electrode for organic semiconductor device, organic semiconductor device using same, and method for manufacturing same

A technology of organic semiconductors and organic semiconductor films, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as degradation, thermal damage to organic semiconductor layers, and damage to organic semiconductor layers

Pending Publication Date: 2022-04-29
THE UNIV OF TOKYO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is known that device characteristics may be degraded due to thermal damage to the organic semiconductor layer when evaporating electrodes, or damage to the organic semiconductor layer caused by resists, etching solutions, etc. at the time of photolithography process

Method used

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  • Source/drain electrode for organic semiconductor device, organic semiconductor device using same, and method for manufacturing same
  • Source/drain electrode for organic semiconductor device, organic semiconductor device using same, and method for manufacturing same
  • Source/drain electrode for organic semiconductor device, organic semiconductor device using same, and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0297] Prepare EAGLE glass (EAGLE XG (registered trademark) of Corning company) as substrate, carry out UV ozone (UV / O 3 ) treatment to form hydroxyl groups on the glass surface. The UV ozone treatment was performed by UV irradiation for 15 minutes under an oxygen atmosphere using a UV lamp UV253H (wavelengths 184.9 nm and 253.7 nm) manufactured by Filgen Corporation.

[0298] SAM treatment was performed on the glass substrate on which hydroxyl groups were formed, and a self-assembled monomolecular film of decyltrimethoxysilane (DTS) was formed as a release layer on the surface of the glass substrate. The SAM treatment is carried out in the following way: arrange the DTS solution and the glass substrate with hydroxyl groups in an airtight container, heat to 120°C to form a saturated vapor atmosphere of DTS molecules, and place the glass substrate with hydroxyl groups in the saturated vapor atmosphere of DTS molecules After standing still for 3 hours, it washed with toluene an...

Embodiment 2

[0307] Au electrodes were produced in the same manner as in Example 1 except that 50 sets of Au electrodes having a thickness of 40 nm and channel length / channel width=200 μm / 1000 μm were formed. Figure 30 50 sets of Au electrodes with a thickness of 40 nm and a channel length / channel width=200 μm / 1000 μm formed on a 1.5 cm square are photographs of the upper surface. Figure 31 shown in Figure 30 An enlarged photograph of a set of source / drain electrodes surrounded by dotted lines.

[0308] The channel length / channel width of the electrodes in each of the obtained Au electrode 50 groups was 200 μm / 1000 μm, and the surface roughness Rq of the electrodes was 0.6 nm. The parallelism of the channel lengths of each electrode group (one element) is 0.1 degrees or less.

Embodiment 3

[0310] An electrode thin film including an Au electrode, a PMMA protective film, and a film for PVA treatment was obtained by the same method as in Example 1.

[0311] A p-type organic semiconductor C of the following formula (16) exhibiting high mobility is prepared 9 - Powder of DNBDT-NW as an organic semiconductor.

[0312]

[0313] Using 3-chlorothiophene as a solvent, organic semiconductor powder is dissolved in the solvent to prepare an organic semiconductor solution.

[0314] Doped Si layered with a gate electrode with a thickness of 500 μm and SiO with a thickness of 100 nm are prepared. 2 And a substrate made of parylene (diX-SR (registered trademark)) with a thickness of 70 nm.

[0315] The prepared organic semiconductor solution was coated on a substrate heated to 80° C. by a continuous edge casting method to produce a monomolecular layer organic semiconductor single crystal film. The surface roughness Rq of the organic semiconductor film was 0.2 nm.

[0316]...

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Abstract

The present disclosure provides a fine electrode capable of making an organic semiconductor less susceptible to change over time and being used in the manufacture of an integrated circuit for the actual use of an organic semiconductor device. The present disclosure relates to a source / drain electrode of an organic semiconductor device, the source / drain electrode including 10 or more groups of electrodes, the channel length between the electrodes of each group being 200 [mu] m or less, and the electrodes of each group having a surface having a surface roughness Rq of 2 nm or less.

Description

technical field [0001] The present disclosure relates to an electrode for source / drain of an organic semiconductor device, an organic semiconductor device using the electrode for source / drain, and methods for manufacturing them. Background technique [0002] In recent years, interest in organic semiconductors has increased. The characteristics of organic semiconductors are different from conventional inorganic semiconductors such as amorphous silicon and polycrystalline silicon, such as excellent flexibility, and the ability to increase the area at low cost by a roll-to-roll process. Organic semiconductors have been studied as Application of post silicon semiconductors in next-generation electronic devices. [0003] In a multilayer device such as an organic field effect transistor (OFET), an electrode such as Au is formed on an organic semiconductor layer by vacuum evaporation, and the formed electrode is patterned by photolithography. However, it is known that device char...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/10H01L51/05H01L51/40H10K99/00
CPCH10K10/476H10K10/466H10K10/84H10K10/82H10K19/10H10K71/80H10K71/60H10K10/88H10K10/474H10K85/6576H10K10/471H10K71/611H10K85/141H10K10/464
Inventor 竹谷纯一渡边峻一郎牧田龙幸
Owner THE UNIV OF TOKYO